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Thickness-dependent change in the valence band offset of the SiO2/Si interface studied using synchrotron-radiation photoemission spectroscopy

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

Applied physics letters, 2012-12, Vol.101 (23)

2012

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High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

Advanced materials (Weinheim), 2007-07, Vol.19 (13), p.1711-1713

2007

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Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

Applied physics letters, 2005-10, Vol.87 (16)

2005

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Development of an enhanced surface plasmon resonance sensor substrate by investigating a periodic nanohole array configuration

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces

Applied physics letters, 2010-09, Vol.97 (13)

2010

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Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

Review of scientific instruments, 2011-11, Vol.82 (11), p.113701-113701-6

2011

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Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3∕Nb:SrTiO3 and SrRuO3∕Nb:SrTiO3 determined by in situ photoemission spectroscopy

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Determination of the surface and interface phase shifts in metallic quantum well structures of perovskite oxides

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), Article 115308

2013

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Ferromagnetic properties of epitaxial La2NiMnO6 thin films grown by pulsed laser deposition

Applied physics letters, 2009-03, Vol.94 (13)

2009

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Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Journal of applied physics, 2011-09, Vol.110 (5), p.053707-053707-7

2011

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Chemical-state-resolved depth profiles of Al/Pr0.7Ca0.3MnO3 stacked structures for application in resistive switching devices

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

Applied physics letters, 2013-10, Vol.103 (17)

2013

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Observation of rebirth of metallic paths during resistance switching of metal nanowire

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

Applied physics letters, 2004-07, Vol.85 (2), p.272-274

2004

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Influence of substrates on epitaxial growth of B-site-ordered perovskite La2NiMnO6 thin films

Journal of applied physics, 2011-09, Vol.110 (6)

2011

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Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

Applied physics letters, 2009-06, Vol.94 (26)

2009

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Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions

Applied physics letters, 2009-06, Vol.94 (24)

2009

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Room-temperature epitaxial growth of GaN on conductive substrates

Applied physics letters, 2003-10, Vol.83 (15), p.3060-3062

2003

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Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films

Applied physics letters, 2003-07, Vol.83 (1), p.39-41

2003

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Room-temperature epitaxial growth of AlN films

Applied physics letters, 2002-09, Vol.81 (13), p.2373-2375

2002

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Epitaxial growth and surface metallic nature of LaNiO3 thin films

Applied physics letters, 2008-06, Vol.92 (26)

2008

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Carrier compensation mechanism in heavily Nb-doped anatase Ti1−xNbxO2+δ epitaxial thin films

Journal of physics. D, Applied physics, 2011-09, Vol.44 (36), p.365404

2011

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Spin and orbital magnetic moments of Fe in the n -type ferromagnetic semiconductor (In,Fe)As

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

Applied physics letters, 2002-10, Vol.81 (16), p.3067-3069

2002

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Thickness-dependent change in the valence band offset of the SiO2/Si interface studied using synchrotron-radiation photoemission spectroscopy

Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

Development of an enhanced surface plasmon resonance sensor substrate by investigating a periodic nanohole array configuration

Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces

Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3∕Nb:SrTiO3 and SrRuO3∕Nb:SrTiO3 determined by in situ photoemission spectroscopy

Determination of the surface and interface phase shifts in metallic quantum well structures of perovskite oxides

Ferromagnetic properties of epitaxial La2NiMnO6 thin films grown by pulsed laser deposition

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Chemical-state-resolved depth profiles of Al/Pr0.7Ca0.3MnO3 stacked structures for application in resistive switching devices

Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

Observation of rebirth of metallic paths during resistance switching of metal nanowire

Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

Influence of substrates on epitaxial growth of B-site-ordered perovskite La2NiMnO6 thin films

Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions

Room-temperature epitaxial growth of GaN on conductive substrates

Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films

Room-temperature epitaxial growth of AlN films

Epitaxial growth and surface metallic nature of LaNiO3 thin films

Carrier compensation mechanism in heavily Nb-doped anatase Ti1−xNbxO2+δ epitaxial thin films

Spin and orbital magnetic moments of Fe in the n -type ferromagnetic semiconductor (In,Fe)As

Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

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