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Boron-doped diamond heater and its application to large-volume,high-pressure, and high-temperature experiments

Review of scientific instruments, 2009-02, Vol.80 (2), p.023907-023907-7

2009

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Precise determination of elastic constants by high-resolution inelastic X-ray scattering

Journal of synchrotron radiation, 2008-11, Vol.15 (6), p.618-623

2008

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Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Materials, 2022-11, Vol.15 (23), p.8415

2022

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Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3771-3776

2019

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Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.2988-2993

2023

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Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Impact of thermal process on interfacial microstructures of Ti- and Pt-based electrodes on C-doped InGaAsSb

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-03, Vol.38 (2)

2020

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Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.16501

2020

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Carrier dynamics in the potential-induced degradation in single-crystalline silicon photovoltaic modules

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3), p.8

2018

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Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Micromachines (Basel), 2023-02, Vol.14 (2), p.439

2023

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Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2010-2016

2021

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Control of the transition frequency of a superconducting flux qubit by longitudinal coupling to the photon number degree of freedom in a resonator

Physical review. B, 2020-09, Vol.102 (9), p.1, Article 094502

2020

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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2081-2089

2023

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Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate

Solid-state electronics, 2022-11, Vol.197, Article 108446

2022

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Photoelectron detection from transient species in organic semiconducting thin films by dual laser pulse irradiation

Applied physics express, 2017-02, Vol.10 (2), p.22401

2017

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Electromagnetic characteristics of eccentric figure-eight coils for transcranial magnetic stimulation: A numerical study

Journal of applied physics, 2012-04, Vol.111 (7), p.07B322-07B322-3

2012

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Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Journal of crystal growth, 2014-06, Vol.395, p.31-37

2014

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Comprehensive modeling of the extrinsic transconductance for InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

Solid-state electronics, 2022-12, Vol.198, Article 108484

2022

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Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7), p.075503

2017

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MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Journal of crystal growth, 2014-10, Vol.404, p.172-176

2014

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Suppressed Self-Heating in Multi-Finger InP-Based DHBTs with Au Subcollector Fabricated on SiC Substrate by Surface-Activated Bonding

ECS transactions, 2016, Vol.75 (9), p.97-102

2016

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Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Electronics (Basel), 2023-01, Vol.12 (2), p.259

2023

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MOCVD growth and device characterization of InP/GaAsSb/InP DHBTs with a GaAs spacer

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

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Boron-doped diamond heater and its application to large-volume,high-pressure, and high-temperature experiments

Precise determination of elastic constants by high-resolution inelastic X-ray scattering

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

Impact of thermal process on interfacial microstructures of Ti- and Pt-based electrodes on C-doped InGaAsSb

Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization

Carrier dynamics in the potential-induced degradation in single-crystalline silicon photovoltaic modules

Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Control of the transition frequency of a superconducting flux qubit by longitudinal coupling to the photon number degree of freedom in a resonator

Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate

Photoelectron detection from transient species in organic semiconducting thin films by dual laser pulse irradiation

Electromagnetic characteristics of eccentric figure-eight coils for transcranial magnetic stimulation: A numerical study

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Comprehensive modeling of the extrinsic transconductance for InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Suppressed Self-Heating in Multi-Finger InP-Based DHBTs with Au Subcollector Fabricated on SiC Substrate by Surface-Activated Bonding

Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

MOCVD growth and device characterization of InP/GaAsSb/InP DHBTs with a GaAs spacer

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