UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization ( invited)

Microelectronic engineering, 2000, Vol.50 (1), p.357-368

2000

Volltextzugriff (PDF)

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Applied surface science, 2003-05, Vol.212-213, p.177-183

2003

Volltextzugriff (PDF)

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

Surface & coatings technology, 2006-12, Vol.201 (7), p.4014-4020

2006

Volltextzugriff (PDF)

Evaluation of LPCVD MeSiN (MeTa, Ti, W, Re) diffusion barriers for Cu metallizations

Microelectronic engineering, 1997-11, Vol.37, p.189-195

1997

Volltextzugriff (PDF)

Deposition of (Ti,Al)N thin films by organometallic chemical vapor deposition : Thermodynamic predictions and experimental results

Surface & coatings technology, 1997-10, Vol.94-95 (1-3), p.285-290

1997

Volltextzugriff (PDF)

Combined thermodynamic and mass transport modeling for material processing from the vapor phase

Thin solid films, 2000-04, Vol.365 (2), p.264-274

2000

Volltextzugriff (PDF)

LPCVD and PACVD (Ti,Al)N films: morphology and mechanical properties

Surface & coatings technology, 1999-07, Vol.115 (2), p.103-110

1999

Volltextzugriff (PDF)

Structural defects in SiC ingots investigated by synchrotron diffraction imaging

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A136-A139

2001

Volltextzugriff (PDF)

Thermodynamic Calculations as the Basis for CVD Production of Silicide Coatings

MRS bulletin, 1999-04, Vol.24 (4), p.27-31

1999

Volltextzugriff (PDF)

Thermodynamic and experimental study of Cu-LPCVD by reduction of copper chloride

Applied surface science, 1995-10, Vol.91 (1), p.175-181

1995

Volltextzugriff (PDF)

Deposition of TiN thin films by organometallic chemical vapor deposition: thermodynamical predictions and experimental results

Surface & coatings technology, 1995-11, Vol.76 (1-3), p.237-243

1995

Volltextzugriff (PDF)

Preparation of aluminum nitride films by low pressure organometallic chemical vapor deposition

Surface & coatings technology, 1995-11, Vol.76 (1-3), p.372-376

1995

Volltextzugriff (PDF)

CVD process for copper interconnection

Microelectronic engineering, 1997-11, Vol.37, p.97-103

1997

Volltextzugriff (PDF)

Chemical vapour deposition of metal silicides in silicon microelectronics

Applied surface science, 1991-11, Vol.53, p.1-10

1991

Volltextzugriff (PDF)

Low temperature specific heat of VSi2, NbSi2, and TaSi2

Journal of low temperature physics, 1993-09, Vol.92 (5-6), p.335-351

1993

Volltextzugriff (PDF)

Macroscopic modelling of silicon carbide sublimation: toward a microscopic modelling of defect formation

Surface & coatings technology, 1997-10, Vol.94 (1-3), p.279-284

1997

Volltextzugriff (PDF)

The modelling routes for the chemical vapour deposition process : application to Si1-xGex deposition

Applied surface science, 1995-10, Vol.91 (1-4), p.34-43

1995

Volltextzugriff (PDF)

Thermodynamic equilibrium and mass transport coupled modelling of the chemical vapour deposition process

Thin solid films, 1996-08, Vol.281, p.64-67

1996

Volltextzugriff (PDF)

Numerical modelling for CVD simulation and process optimization: coupled thermochemical and mass transport approaches

Surface & coatings technology, 1993-12, Vol.61 (1), p.274-281

1993

Volltextzugriff (PDF)

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Diamond and related materials, 1997-08, Vol.6 (10), p.1369-1373

1997

Volltextzugriff (PDF)

Thermodynamic analysis and deposition of refractory materials

Surface & coatings technology, 1991-12, Vol.49 (1), p.208-214

1991

Volltextzugriff (PDF)

Defects formation in sublimation grown 6H-SiC single crystal boules

Diamond and related materials, 1997-08, Vol.6 (10), p.1249-1261

1997

Volltextzugriff (PDF)

Copper LPCVD for advanced technology

Microelectronic engineering, 1997, Vol.33 (1), p.25-30

1997

Volltextzugriff (PDF)

Reaction of Ta thin film with single crystalline (001) beta-SiC

Journal of applied physics, 1994-08, Vol.76 (4), p.2169-2175

1994

Volltextzugriff (PDF)

Some electronic properties of single crystalline NiSi

Microelectronic engineering, 1997-11, Vol.37, p.523-527

1997

Volltextzugriff (PDF)

1 – 25 von 42

Suche als RSS-Feed

Aktive Filter

ThemaPhysics, Applied

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(38)
Mit Volltextzugriff
(41)

Publikationsform

Artikel
(41)
Tagungsberichte
(1)

Sprache

Englisch
(42)
Japanisch
(7)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization ( invited)

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

Evaluation of LPCVD MeSiN (MeTa, Ti, W, Re) diffusion barriers for Cu metallizations

Deposition of (Ti,Al)N thin films by organometallic chemical vapor deposition : Thermodynamic predictions and experimental results

Combined thermodynamic and mass transport modeling for material processing from the vapor phase

LPCVD and PACVD (Ti,Al)N films: morphology and mechanical properties

Structural defects in SiC ingots investigated by synchrotron diffraction imaging

Thermodynamic Calculations as the Basis for CVD Production of Silicide Coatings

Thermodynamic and experimental study of Cu-LPCVD by reduction of copper chloride

Deposition of TiN thin films by organometallic chemical vapor deposition: thermodynamical predictions and experimental results

Preparation of aluminum nitride films by low pressure organometallic chemical vapor deposition

CVD process for copper interconnection

Chemical vapour deposition of metal silicides in silicon microelectronics

Low temperature specific heat of VSi2, NbSi2, and TaSi2

Macroscopic modelling of silicon carbide sublimation: toward a microscopic modelling of defect formation

The modelling routes for the chemical vapour deposition process : application to Si1-xGex deposition

Thermodynamic equilibrium and mass transport coupled modelling of the chemical vapour deposition process

Numerical modelling for CVD simulation and process optimization: coupled thermochemical and mass transport approaches

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Thermodynamic analysis and deposition of refractory materials

Defects formation in sublimation grown 6H-SiC single crystal boules

Copper LPCVD for advanced technology

Reaction of Ta thin film with single crystalline (001) beta-SiC

Some electronic properties of single crystalline NiSi

Aktive Filter

Suchergebnisse filtern