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Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Applied physics letters, 2018-03, Vol.112 (13)

2018

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Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Applied physics letters, 2018-02, Vol.112 (7)

2018

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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-micro letters, 2021-01, Vol.13 (1), p.33-33, Article 33

2021

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Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials

Journal of applied physics, 2020-08, Vol.128 (7)

2020

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Electrical switching properties and structural characteristics of GeSe-GeTe films

Nanoscale, 2019-01, Vol.11 (4), p.1595-1603

2019

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Low-energy phase change memory with graphene confined layer

Applied physics letters, 2016-06, Vol.108 (25)

2016

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Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Observation of van der Waals reconfiguration in superlattice phase change materials

Nanoscale, 2019-09, Vol.11 (36), p.16954-16961

2019

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Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Journal of materials science. Materials in electronics, 2020-04, Vol.31 (8), p.5833-5837

2020

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The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Nano futures, 2017-09, Vol.1 (2)

2017

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Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thin solid films, 2021-09, Vol.734, p.138837, Article 138837

2021

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12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.1455-1461

2021

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Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

Jpn J Appl Phys, 2010-02, Vol.49 (2), p.026503-026503-4

2010

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Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory

Journal of nanoscience and nanotechnology, 2009-02, Vol.9 (2), p.1526-1529

2009

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The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Materials letters, 2019-11, Vol.254, p.182-185

2019

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Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Applied surface science, 2010-03, Vol.256 (11), p.3499-3502

2010

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Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Materials today physics, 2020-12, Vol.15, p.100266, Article 100266

2020

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Constructing reliable PCM and OTS devices with an interfacial carbon layer

Journal of materials science. Materials in electronics, 2019-11, Vol.30 (22), p.20037-20042

2019

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Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (38), p.11813-11823

2019

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Carbon layer application in phase change memory to reduce power consumption and atomic migration

Materials letters, 2017-11, Vol.206, p.52-55

2017

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Enhanced performance of phase change memory by grain size reduction

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-03, Vol.10 (9), p.3585-3592

2022

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Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

Applied physics. A, Materials science & processing, 2016-09, Vol.122 (9), p.1-6, Article 865

2016

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Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices

Thin solid films, 2015-09, Vol.590, p.13-16

2015

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Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory

Physica status solidi. PSS-RRL. Rapid research letters, 2015-08, Vol.9 (8), p.470-474

2015

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Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials

Electrical switching properties and structural characteristics of GeSe-GeTe films

Low-energy phase change memory with graphene confined layer

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Observation of van der Waals reconfiguration in superlattice phase change materials

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation

Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory

The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Constructing reliable PCM and OTS devices with an interfacial carbon layer

Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Carbon layer application in phase change memory to reduce power consumption and atomic migration

Enhanced performance of phase change memory by grain size reduction

Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices

Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory

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