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Stress evolution of Ge nanocrystals in dielectric matrices

Nanotechnology, 2018-05, Vol.29 (18), p.185704

2018

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Transfer-free, scalable vertical heterostructure FET on MoS2/WS2 continuous films

Nanotechnology, 2022-11, Vol.33 (47)

2022

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Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Applied surface science, 2018-03, Vol.435, p.880-885

2018

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Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Gamma and neutron irradiation effects on multi-walled carbon nanotubes

Diamond and related materials, 2018-08, Vol.87, p.242-247

2018

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Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Journal of electronic materials, 2023-09, Vol.52 (9), p.6042-6051

2023

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High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes

Journal of physics. D, Applied physics, 2008-05, Vol.41 (10), p.105301-105301 (5)

2008

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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Materials science in semiconductor processing, 2021-06, Vol.127, p.105733, Article 105733

2021

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The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Journal of physics. D, Applied physics, 2018-01, Vol.51 (3), p.35105

2018

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Molecular beam epitaxy of N-polar InGaN

Applied physics letters, 2010-08, Vol.97 (7), p.071903-071903-3

2010

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Temperature dependent capacitance and DLTS studies of Ni/ n-type 6H-SiC Schottky diode

Current Applied Physics, 2009, 9(6), , pp.1181-1185

2009

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Ultra-conductive wires with cascaded carbon nanotube/Cu structure

Diamond and related materials, 2021-12, Vol.120, p.108711, Article 108711

2021

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Formation of carbon nanowalls by pulsed filtered cathodic vacuum arc deposition

Diamond and related materials, 2019-03, Vol.93, p.200-207

2019

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N-Polar III--Nitride Green (540 nm) Light Emitting Diode

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5), p.052101-052101-3

2011

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Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

European physical journal. Applied physics, 2020-05, Vol.90 (2), p.20301

2020

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Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Applied physics letters, 2011-08, Vol.99 (9), p.092109-092109-3

2011

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Effects of gold nanoparticles on the growth of ZnO thin films and p-Si/ZnO heterostructures

Materials science in semiconductor processing, 2018-02, Vol.74, p.249-254

2018

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Band gap engineering and modifying surface of TiO2 nanostructures by Fe2O3 for enhanced-performance of dye sensitized solar cell

Materials science in semiconductor processing, 2015-03, Vol.31, p.363-371

2015

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Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Journal of materials science. Materials in electronics, 2021-03, Vol.32 (6), p.7541-7549

2021

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Electrochemical growth of n -ZnO onto the p -type GaN substrate: p - n heterojunction characteristics

Applied physics letters, 2009-06, Vol.94 (25), p.253501-253501-3

2009

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Oxygen deficiency effects on recombination lifetime and photoluminescence characteristics of ZnO thin films; correlation with crystal structure

Applied physics. A, Materials science & processing, 2009-03, Vol.94 (3), p.549-554

2009

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An investigation of control mechanisms of the excitonic behavior in reactively sputtered ZnO on (0001) Al2O3

Journal of applied physics, 2006-11, Vol.100 (10)

2006

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Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1464-1467

2010

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Determination of the transport mechanisms in mixed conduction of reactively sputtered ZnO thin films

Journal of physics. D, Applied physics, 2008-07, Vol.41 (13), p.135309-135309 (9)

2008

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Stress evolution of Ge nanocrystals in dielectric matrices

Transfer-free, scalable vertical heterostructure FET on MoS2/WS2 continuous films

Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Gamma and neutron irradiation effects on multi-walled carbon nanotubes

Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Molecular beam epitaxy of N-polar InGaN

Temperature dependent capacitance and DLTS studies of Ni/ n-type 6H-SiC Schottky diode

Ultra-conductive wires with cascaded carbon nanotube/Cu structure

Formation of carbon nanowalls by pulsed filtered cathodic vacuum arc deposition

N-Polar III--Nitride Green (540 nm) Light Emitting Diode

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Effects of gold nanoparticles on the growth of ZnO thin films and p-Si/ZnO heterostructures

Band gap engineering and modifying surface of TiO2 nanostructures by Fe2O3 for enhanced-performance of dye sensitized solar cell

Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Electrochemical growth of n -ZnO onto the p -type GaN substrate: p - n heterojunction characteristics

Oxygen deficiency effects on recombination lifetime and photoluminescence characteristics of ZnO thin films; correlation with crystal structure

An investigation of control mechanisms of the excitonic behavior in reactively sputtered ZnO on (0001) Al2O3

Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction

Determination of the transport mechanisms in mixed conduction of reactively sputtered ZnO thin films

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