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3.4% Solar‐to‐Ammonia Efficiency from Nitrate Using Fe Single Atomic Catalyst Supported on MoS2 Nanosheets

Advanced functional materials, 2022-05, Vol.32 (18), p.n/a

2022

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A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

Nano letters, 2023-07, Vol.23 (13), p.6109-6115

2023

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High efficiency grating couplers for strain tunable GaAs quantum dot based entangled photon sources

AIP advances, 2024-01, Vol.14 (1), p.015244-015244-8

2024

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Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6020-6025

2021

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Single photon emission from ODT passivated near-surface GaAs quantum dots

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.948-953

2021

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Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-07, Vol.34 (4)

2016

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Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4251-4258

2021

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Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

Journal of applied physics, 2016-08, Vol.120 (7)

2016

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Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Microelectronics and reliability, 2020-04, Vol.107, p.113627, Article 113627

2020

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Statistical limits for entanglement swapping with semiconductor entangled photon sources

Physical review. B, 2022-06, Vol.105 (23), Article 235305

2022

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GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.949-952

2014

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Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.714-717

2014

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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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Defect study of GaN based LED structure by electron beam induced current

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.734-737

2014

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Jan Vanhellemont - 35 years of materials research in microelectronics

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.706-711

2016

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Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.718-721

2014

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Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applications

Surface & coatings technology, 2011-05, Vol.205 (17), p.4267-4273

2011

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Carrier trapping induced abnormal temperature dependent photoluminescence properties of novel sandwiched structure InGaN quantum wells

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.706-709

2014

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Spin waves in antiferromagnetic spin chains with long-range interactions

Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (14), Article 144412

2004

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Dynamics of weakly coupled random antiferromagnetic quantum spin chains

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (2), Article 020403

2005

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Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

Physica status solidi. C, 2011-03, Vol.8 (3), p.674-677

2011

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Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?

Physica status solidi. C, 2009-08, Vol.6 (8), p.1912-1917

2009

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3.4% Solar‐to‐Ammonia Efficiency from Nitrate Using Fe Single Atomic Catalyst Supported on MoS2 Nanosheets

A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

High efficiency grating couplers for strain tunable GaAs quantum dot based entangled photon sources

Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate

Single photon emission from ODT passivated near-surface GaAs quantum dots

Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Statistical limits for entanglement swapping with semiconductor entangled photon sources

GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures

Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

Defect study of GaN based LED structure by electron beam induced current

Jan Vanhellemont - 35 years of materials research in microelectronics

Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes

Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applications

Carrier trapping induced abnormal temperature dependent photoluminescence properties of novel sandwiched structure InGaN quantum wells

Spin waves in antiferromagnetic spin chains with long-range interactions

Dynamics of weakly coupled random antiferromagnetic quantum spin chains

Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?

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