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Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Low-temperature deposition of μc-Si: H thin films by a low-frequency inductively coupled plasma for photovoltaic applications

Journal of physics. D, Applied physics, 2013-05, Vol.46 (21), p.215501

2013

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The energy-band alignment at molybdenum disulphide and high- k dielectrics interfaces

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Diindenoperylene thin-film structure on MoS2 monolayer

Applied physics letters, 2019-06, Vol.114 (25)

2019

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Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

Thin solid films, 2005-02, Vol.473 (1), p.132-136

2005

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Modulatory difference due to injury pattern in the moderate-TBI brain: Effective connectivity of working memory from preliminary findings

Journal of physics. Conference series, 2020-03, Vol.1497 (1), p.12007

2020

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A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

Thin solid films, 2004-07, Vol.460 (1), p.211-216

2004

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Density functional study on ferromagnetism in nitrogen-doped anatase TiO2

Applied physics letters, 2009-08, Vol.95 (6)

2009

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P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Applied surface science, 2016-07, Vol.376, p.236-240

2016

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Impact of interface structure on Schottky-barrier height for Ni∕ZrO2(001) interfaces

Applied physics letters, 2005-03, Vol.86 (13)

2005

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Metal-containing amorphous carbon films for hydrophobic application

Thin solid films, 2001-11, Vol.398, p.110-115

2001

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Impact of oxide defects on band offset at GeO2/Ge interface

Applied physics letters, 2009-04, Vol.94 (14)

2009

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Correlation between the corrosion behavior and corrosion films formed on the surfaces of Mg82-xNi18Ndx (x = 0, 5, 15) amorphous alloys

Applied surface science, 2001-03, Vol.173 (1-2), p.54-61

2001

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Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

Applied physics letters, 2009-10, Vol.95 (16)

2009

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Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

Applied physics letters, 2010-03, Vol.96 (11)

2010

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Thermal stability and band alignments for Ge3N4 dielectrics on Ge

Applied physics letters, 2006-07, Vol.89 (2)

2006

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Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 films

Applied physics letters, 2006-12, Vol.89 (23)

2006

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X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

Applied physics letters, 2008-03, Vol.92 (9)

2008

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Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

Applied physics letters, 2006-05, Vol.88 (19)

2006

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In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

Applied physics letters, 2010-02, Vol.96 (7), p.72111

2010

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p-type doping of ZnO by means of high-density inductively coupled plasmas

Materials letters, 2009-05, Vol.63 (12), p.972-974

2009

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In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

Thin solid films, 2010-10, Vol.518 (24), p.e31-e33

2010

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Surface energy of amorphous carbon films containing iron

Journal of applied physics, 2001-06, Vol.89 (12), p.7814-7819

2001

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Energy-band alignments at LaAlO3 and Ge interfaces

Applied physics letters, 2006-11, Vol.89 (20)

2006

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Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin-film transistors

Physica status solidi. A, Applications and materials science, 2010-07, Vol.207 (7), p.1731-1734

2010

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Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

Low-temperature deposition of μc-Si: H thin films by a low-frequency inductively coupled plasma for photovoltaic applications

The energy-band alignment at molybdenum disulphide and high- k dielectrics interfaces

Diindenoperylene thin-film structure on MoS2 monolayer

Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

Modulatory difference due to injury pattern in the moderate-TBI brain: Effective connectivity of working memory from preliminary findings

A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

Density functional study on ferromagnetism in nitrogen-doped anatase TiO2

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Impact of interface structure on Schottky-barrier height for Ni∕ZrO2(001) interfaces

Metal-containing amorphous carbon films for hydrophobic application

Impact of oxide defects on band offset at GeO2/Ge interface

Correlation between the corrosion behavior and corrosion films formed on the surfaces of Mg82-xNi18Ndx (x = 0, 5, 15) amorphous alloys

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

Thermal stability and band alignments for Ge3N4 dielectrics on Ge

Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 films

X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

p-type doping of ZnO by means of high-density inductively coupled plasmas

In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

Surface energy of amorphous carbon films containing iron

Energy-band alignments at LaAlO3 and Ge interfaces

Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin-film transistors

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