UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

Volltextzugriff (PDF)

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

Volltextzugriff (PDF)

SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

Volltextzugriff (PDF)

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

Volltextzugriff (PDF)

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

Volltextzugriff (PDF)

Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

Volltextzugriff (PDF)

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

Volltextzugriff (PDF)

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

Volltextzugriff (PDF)

SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

Volltextzugriff (PDF)

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

Volltextzugriff (PDF)

SiGe heterostructure CMOS circuits and applications

Solid-state electronics, 1999-08, Vol.43 (8), p.1497-1506

1999

Volltextzugriff (PDF)

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

Volltextzugriff (PDF)

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Thin solid films, 1997-02, Vol.294 (1), p.160-165

Whall, T.E.

1997

Volltextzugriff (PDF)

p-channel SiGe heterostructures for field effect applications

Applied surface science, 1996-08, Vol.102, p.221-229

Whall, T.E.

1996

Volltextzugriff (PDF)

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

Volltextzugriff (PDF)

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Journal of crystal growth, 1995-12, Vol.157 (1), p.353-361

Whall, T.E.

1995

Volltextzugriff (PDF)

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

Volltextzugriff (PDF)

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003-05, Vol.18 (1-3), p.145-146

2003

Volltextzugriff (PDF)

Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic engineering, 2000-05, Vol.51-52, p.541-546

2000

Volltextzugriff (PDF)

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

Volltextzugriff (PDF)

Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Thin solid films, 1997-09, Vol.306 (2), p.338-345

1997

Volltextzugriff (PDF)

Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE

Microelectronic engineering, 2000-05, Vol.51-52, p.527-534

2000

Volltextzugriff (PDF)

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Journal of crystal growth, 1995-12, Vol.157 (1), p.109-112

1995

Volltextzugriff (PDF)

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

Thin solid films, 1992-12, Vol.222 (1-2), p.141-144

1992

Volltextzugriff (PDF)

Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model

Surface science, 1996-01, Vol.361, p.933-936

1996

Volltextzugriff (PDF)

1 – 25 von 52

Suche als RSS-Feed

Aktive Filter

ThemaPhysical Sciences

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(48)
Mit Volltextzugriff
(51)

Publikationsform

Artikel
(49)
Tagungsberichte
(3)

Sprache

Englisch
(52)

Erscheinungsjahr

n.n

Kollektion

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

SiGe(C) epitaxial technologies—issues and prospectives

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Improved effective mobility extraction in MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

SiGe : heterostructures for CMOS technology

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

SiGe heterostructure CMOS circuits and applications

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

p-channel SiGe heterostructures for field effect applications

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model

Aktive Filter

Suchergebnisse filtern