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Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

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Physical and chemical mechanisms in oxide-based resistance random access memory

Nanoscale research letters, 2015-03, Vol.10 (1), p.120-120, Article 120

2015

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Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Nanoscale research letters, 2017-10, Vol.12 (1), p.1-6, Article 574

2017

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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1811-1815

2022

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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

RSC advances, 2018-01, Vol.8 (13), p.6925-693

2018

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Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

2023

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Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Nanoscale research letters, 2014-01, Vol.9 (1), p.52-52, Article 52

2014

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Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Applied physics letters, 2014-03, Vol.104 (13)

2014

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The influence of temperature on set voltage for different high resistance state in 1T1R devices

Applied physics express, 2019-02, Vol.12 (2), p.24004

2019

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Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (9), p.2204

2021

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Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Solid-state electronics, 2011-09, Vol.63 (1), p.189-191

2011

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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1), p.10303-010303

2017

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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

Nanoscale research letters, 2016-02, Vol.11 (1), p.52-52, Article 52

2016

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Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor

Applied physics letters, 2019-09, Vol.115 (14)

2019

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Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4659-4666

2018

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Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Journal of applied physics, 2013-12, Vol.114 (23)

2013

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Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices

Small (Weinheim an der Bergstrasse, Germany), 2020-10, Vol.16 (42), p.e2003964-n/a

2020

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Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Applied physics letters, 2020-05, Vol.116 (18)

2020

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Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer

Thin solid films, 2013-01, Vol.528, p.31-35

2013

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High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Nanoscale research letters, 2013-11, Vol.8 (1), p.497-497, Article 497

2013

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Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

Nanoscale, 2017-05, Vol.9 (20), p.6649-6657

2017

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Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

Applied physics letters, 2021-10, Vol.119 (17)

2021

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In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1293-1296

2020

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Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Physical and chemical mechanisms in oxide-based resistance random access memory

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

The influence of temperature on set voltage for different high resistance state in 1T1R devices

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor

Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor

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