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Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Applied physics express, 2019-10, Vol.12 (10), p.106502

2019

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Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGH03

2020

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Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP advances, 2020-08, Vol.10 (8), p.085218-085218-5

2020

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Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Physica status solidi. C, 2012-02, Vol.9 (2), p.377-380

2012

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Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

Journal of infrared, millimeter and terahertz waves, 2018-11, Vol.39 (11), p.1087-1111

2018

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III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBH14

2021

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Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

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Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Physica status solidi. C, 2007-06, Vol.4 (7), p.2581-2584

2007

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Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama), 2018, p.2461-2466

2018

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Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6S), p.5504

2006

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Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

Applied surface science, 2003-06, Vol.216 (1), p.413-418

2003

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Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials

Japanese Journal of Applied Physics, 2001-09, Vol.40 (9R), p.5217

2001

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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Applied surface science, 2002-05, Vol.190 (1), p.288-293

2002

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Characterization of GaInAs/InP triple-barrier resonant tunneling diodes grown by organo-metallic vapor phase epitaxy for high-temperature estimation of phase coherent length of electrons

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1846-1848

1997

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Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 1998-02, Vol.37 (2R), p.445

1998

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A 40-nm-pitch double-slit experiment of hot electrons in a semiconductor under a magnetic field

Applied physics letters, 1997-01, Vol.70 (1), p.93-95

1997

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Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

Japanese Journal of Applied Physics, 1999-06, Vol.38 (6R), p.3466

1999

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A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist

Japanese Journal of Applied Physics, 1998-07, Vol.37 (7A), p.L827

1998

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Equivalent circuit modeling of triple‐barrier resonant tunneling diodes taking nonlinear quantum inductance and capacitance into account

Physica status solidi. C, 2010-10, Vol.7 (10), p.2555-2558

2010

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Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1518

1998

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Peak Width Analysis of Current–Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 2000, Vol.39 (6R), p.3314-3318

2000

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A novel method to clarify nonlinear equivalent circuits of tunnel diodes by extracting rate constants for nonequilibrium electrons

Physica status solidi. C, 2012-02, Vol.9 (2), p.278-281

2012

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High peak-to-valley current ratio GaInAs/GaInP resonant tunneling diodes

Japanese Journal of Applied Physics, 1997-08, Vol.36 (8), p.5079-5080

1997

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Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 1994, Vol.33 (12R), p.6491

1994

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Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes

Japanese Journal of Applied Physics, 1995, Vol.34 (8B), p.4452-4454

1995

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Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting

Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Characterization of GaInAs/InP triple-barrier resonant tunneling diodes grown by organo-metallic vapor phase epitaxy for high-temperature estimation of phase coherent length of electrons

Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy

A 40-nm-pitch double-slit experiment of hot electrons in a semiconductor under a magnetic field

Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist

Equivalent circuit modeling of triple‐barrier resonant tunneling diodes taking nonlinear quantum inductance and capacitance into account

Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices

Peak Width Analysis of Current–Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes

A novel method to clarify nonlinear equivalent circuits of tunnel diodes by extracting rate constants for nonequilibrium electrons

High peak-to-valley current ratio GaInAs/GaInP resonant tunneling diodes

Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes

Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes

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