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Reliability of STT-MRAM for various embedded applications

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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A process integration of high-performance 64-kb MRAM

IEEE transactions on magnetics, 2003-09, Vol.39 (5), p.2851-2853

2003

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A new reference signal generation method for MRAM using a 90-degree rotated MTJ

IEEE transactions on magnetics, 2004-07, Vol.40 (4), p.2628-2630

2004

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Fabrication of high performance 64 kb MRAM

Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.1941-1942

2004

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Writing current reduction and total set resistance analysis in PRAM

Solid-state electronics, 2008-04, Vol.52 (4), p.591-595

2008

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MLC PRAM with SLC write-speed and robust read scheme

2010 Symposium on VLSI Technology, 2010, p.201-202

2010

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Dynamic loading impact-induced demagnetization in thin film media

IEEE transactions on magnetics, 1993-11, Vol.29 (6), p.3903-3905

1993

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Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Journal of applied physics, 2005-05, Vol.97 (10), p.10C905-10C905-3

2005

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Slider-disk interactions during the load-unload process

IEEE transactions on magnetics, 1990-09, Vol.26 (5), p.2490-2492

1990

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A novel process for highly manufacturable MRAM

Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.1936-1938

2004

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Unloaded slider vibrations excited by air flow between slider and rotating disk

IEEE transactions on magnetics, 1992-09, Vol.28 (5), p.2539-2541

1992

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Realization of vertical resistive memory (VRRAM) using cost effective 3D process

2011 International Electron Devices Meeting, 2011, p.31.8.1-31.8.4

2011

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PRAM cell technology and characterization in 20nm node size

2011 International Electron Devices Meeting, 2011, p.3.1.1-3.1.4

2011

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Measurements of slider-disk contacts during dynamic load-unload

IEEE transactions on magnetics, 1991-11, Vol.27 (6), p.5073-5075

1991

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Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

Integrated ferroelectrics, 2007-04, Vol.90 (1), p.88-94

2007

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Natural frequencies of sliders and transducers used to detect slider-disk contacts

IEEE transactions on magnetics, 1989-09, Vol.25 (5), p.3725-3727

1989

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Advanced ring type contact technology for high density phase change memory

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.513-516

2005

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Process technologies for the integration of high density phase change RAM

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, 2005, p.19-22

2005

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Increasing magnetic relaxation in granular high Tc superconductor

Physica. C, Superconductivity, 1991-12, Vol.185/89, p.2239-2240

1991

Volltextzugriff (PDF)

Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology

2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), 2003, p.29-31

2003

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An optimum design of the sub-ambient pressure shaped rail sliders on flying characteristics considering the high altitude condition

IEEE transactions on magnetics, 1999-09, Vol.35 (5), p.2424-2426

1999

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Field assisted spin switching in magnetic random access memory

Journal of applied physics, 2006-04, Vol.99 (8), p.08H708-08H708-3

2006

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Energy gap of quaternary compound superconductor YNi2B2C and LuNi2B2C by point-contact spectroscopy

Physica. C, Superconductivity, 1995-10, Vol.253 (1-2), p.48-52

1995

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Highly manufacturable high density phase change memory of 64Mb and beyond

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.907-910

2004

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Integration technologies for scalable high density MRAM

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.39-40

2005

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Reliability of STT-MRAM for various embedded applications

A process integration of high-performance 64-kb MRAM

A new reference signal generation method for MRAM using a 90-degree rotated MTJ

Fabrication of high performance 64 kb MRAM

Writing current reduction and total set resistance analysis in PRAM

MLC PRAM with SLC write-speed and robust read scheme

Dynamic loading impact-induced demagnetization in thin film media

Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Slider-disk interactions during the load-unload process

A novel process for highly manufacturable MRAM

Unloaded slider vibrations excited by air flow between slider and rotating disk

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

PRAM cell technology and characterization in 20nm node size

Measurements of slider-disk contacts during dynamic load-unload

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

Natural frequencies of sliders and transducers used to detect slider-disk contacts

Advanced ring type contact technology for high density phase change memory

Process technologies for the integration of high density phase change RAM

Increasing magnetic relaxation in granular high Tc superconductor

Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology

An optimum design of the sub-ambient pressure shaped rail sliders on flying characteristics considering the high altitude condition

Field assisted spin switching in magnetic random access memory

Energy gap of quaternary compound superconductor YNi2B2C and LuNi2B2C by point-contact spectroscopy

Highly manufacturable high density phase change memory of 64Mb and beyond

Integration technologies for scalable high density MRAM

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