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Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

Applied physics letters, 2007-03, Vol.90 (13), p.131107-131107-3

2007

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Properties of sediment NOM collected from a drinking water reservoir in South China, and its association with THMs and HAAs formation

Journal of hydrology (Amsterdam), 2013-01, Vol.476 (7), p.274-279

2013

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Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n -type GaN

Journal of applied physics, 2003-08, Vol.94 (3), p.1485-1489

2003

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Stress-relaxed growth of n-GaN epilayers

Applied physics letters, 2012-04, Vol.100 (18), p.181904-181904-4

2012

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Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films

Nanoscale, 2010-07, Vol.2 (7), p.1155-1159

2010

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High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Applied physics letters, 2009-07, Vol.95 (1), p.011108-011108-3

2009

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Coalescence driven size-controlled synthesis of ITO nanospheres

Applied surface science, 2012-09, Vol.258 (22), p.8996-9004

2012

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Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

Thin solid films, 2011-08, Vol.519 (20), p.6829-6833

2011

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Electron Beam Irradiated ITO Films as Highly Transparent p-Type Electrodes for GaN-Based LEDs

Journal of nanoscience and nanotechnology, 2013-08, Vol.13 (8), p.5420-5423

2013

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Bulk GaN crystal growth by the high-pressure ammonothermal method

Journal of crystal growth, 2007-03, Vol.300 (1), p.11-16

2007

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Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures

Journal of physics. D, Applied physics, 2007-09, Vol.40 (17), p.5050-5054

2007

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An improved method for determining HNMs in drinking water

Water science & technology. Water supply, 2013-09, Vol.13 (5), p.1257-1264

2013

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Effects of medium oil on electroresponsive characteristics of chitosan suspensions

Colloid and polymer science, 2009-05, Vol.287 (5), p.583-589

2009

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Electron traps and growth rate of buffer layers in unintentionally doped GaN

Journal of crystal growth, 2001-02, Vol.223 (1), p.38-42

2001

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Polymer turbulent drag reduction near the theta point

Europhysics letters, 2007-12, Vol.80 (5), p.58003-5

2007

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Improved GaN-Based LED Light Extraction Efficiencies via Selective MOCVD Using Peripheral Microhole Arrays

IEEE photonics technology letters, 2008-08, Vol.20 (15), p.1284-1286

2008

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Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

Applied physics letters, 2001-08, Vol.79 (7), p.976-978

2001

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Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

Journal of crystal growth, 2007, Vol.298, p.699-702

2007

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Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Applied physics letters, 2006-02, Vol.88 (6)

2006

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Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

Applied physics letters, 2002-11, Vol.81 (19), p.3552-3554

2002

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White light generation from In-rich InAlGaN/InGaN heterostructures

Journal of physics. D, Applied physics, 2008-01, Vol.41 (1), p.012001-012001 (4)

2008

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Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n -type GaN epilayers

Applied physics letters, 2000-10, Vol.77 (16), p.2557-2559

2000

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Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2799-2802

2004

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Yellow luminescence and persistent photoconductivity of undoped n -type GaN

Journal of applied physics, 2001-05, Vol.89 (10), p.5454-5459

2001

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Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells

Applied physics letters, 2001-11, Vol.79 (21), p.3440-3442

2001

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Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

Properties of sediment NOM collected from a drinking water reservoir in South China, and its association with THMs and HAAs formation

Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n -type GaN

Stress-relaxed growth of n-GaN epilayers

Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Coalescence driven size-controlled synthesis of ITO nanospheres

Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

Electron Beam Irradiated ITO Films as Highly Transparent p-Type Electrodes for GaN-Based LEDs

Bulk GaN crystal growth by the high-pressure ammonothermal method

Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures

An improved method for determining HNMs in drinking water

Effects of medium oil on electroresponsive characteristics of chitosan suspensions

Electron traps and growth rate of buffer layers in unintentionally doped GaN

Polymer turbulent drag reduction near the theta point

Improved GaN-Based LED Light Extraction Efficiencies via Selective MOCVD Using Peripheral Microhole Arrays

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

White light generation from In-rich InAlGaN/InGaN heterostructures

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n -type GaN epilayers

Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers

Yellow luminescence and persistent photoconductivity of undoped n -type GaN

Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells

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