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Tactile displays: Overview and recent advances

Displays, 2008-07, Vol.29 (3), p.185-194

2008

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Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of applied physics, 2013-11, Vol.114 (18)

2013

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Optimizing the design of a tactile display based on a capacitive micromachined ultrasonic transducer array

International journal of numerical modelling, 2013-09, Vol.26 (5), p.448-456

2013

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Leakage current mechanism in sub-micron polysilicon thin-film transistors

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1218-1223

1996

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Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition

Journal of applied physics, 1995-12, Vol.78 (12), p.6999-7006

1995

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Polysilicon TFT technology for active matrix OLED displays

IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.845-851

2001

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Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results

Journal of microelectromechanical systems, 2003-02, Vol.12 (1), p.93-100

2003

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Luminescence of Intraporous Cerium(III) Complexes in Alkyl Sulfonic Mesoporous Silica

Chemistry of materials, 2008-02, Vol.20 (4), p.1359-1366

2008

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Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

The Journal of physics and chemistry of solids, 2009-09, Vol.70 (9), p.1302-1311

2009

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Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications

Thin solid films, 1999-06, Vol.347 (1), p.278-283

1999

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Reaction Mechanisms in Aluminum‐Indium Tin Oxide Ohmic Contact Metallization with Co and Ni Barrier Layers for Active‐Matrix‐Display Applications

Journal of the Electrochemical Society, 1999-08, Vol.146 (8), p.3134-3138

1999

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Elimination of hillock formation in Al interconnects using Ni or Co

Journal of applied physics, 1999-07, Vol.86 (1), p.625-633

1999

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The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1306-1308

1996

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Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-01, Vol.18 (1), p.87-93

2000

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Characterization of cobalt annealed on silicon-germanium epilayers

Thin solid films, 1994-10, Vol.250 (1), p.20-25

1994

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Voltage Noise Characteristics of Polysilicon P-I-N Diodes

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1054-1062

2011

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Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures

Journal of the Electrochemical Society, 1992-09, Vol.139 (9), p.2659-2665

1992

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Novel Cleaning Methodology for Steel Substrates in Microelectronic Fabrication

Journal of the Electrochemical Society, 2002-02, Vol.149 (2), p.G143

2002

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Water Gas Shift Reaction in a glass microreactor

Catalysis today, 2007-01, Vol.120 (1), p.107-120

2007

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High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1399-1406

1996

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Properties of Cadmium Selenide Thin Films as a Function of Lateral Distance from Chromium Contacts

Journal of the Electrochemical Society, 1993-10, Vol.140 (10), p.2994-2998

1993

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Deposition and Crystallization of a‐Si Low Pressure Chemically Vapor Deposited Films Obtained by Low‐Temperature Pyrolysis of Disilane

Journal of the Electrochemical Society, 1993-03, Vol.140 (3), p.871-877

1993

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Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

IEEE transactions on electron devices, 1988-08, Vol.35 (8), p.1334-1343

1988

Volltextzugriff (PDF)

Surface Treatment Effect on the Grain Size and Surface Roughness of as‐Deposited LPCVD Polysilicon Films

Journal of the Electrochemical Society, 1993-01, Vol.140 (1), p.282-288

1993

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Low-temperature polycrystalline silicon thin-film transistors for displays

IEEE transactions on electron devices, 1988-11, Vol.35 (11), p.1842-1845

1988

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Tactile displays: Overview and recent advances

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Optimizing the design of a tactile display based on a capacitive micromachined ultrasonic transducer array

Leakage current mechanism in sub-micron polysilicon thin-film transistors

Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition

Polysilicon TFT technology for active matrix OLED displays

Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results

Luminescence of Intraporous Cerium(III) Complexes in Alkyl Sulfonic Mesoporous Silica

Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications

Reaction Mechanisms in Aluminum‐Indium Tin Oxide Ohmic Contact Metallization with Co and Ni Barrier Layers for Active‐Matrix‐Display Applications

Elimination of hillock formation in Al interconnects using Ni or Co

The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors

Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films

Characterization of cobalt annealed on silicon-germanium epilayers

Voltage Noise Characteristics of Polysilicon P-I-N Diodes

Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures

Novel Cleaning Methodology for Steel Substrates in Microelectronic Fabrication

Water Gas Shift Reaction in a glass microreactor

High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

Properties of Cadmium Selenide Thin Films as a Function of Lateral Distance from Chromium Contacts

Deposition and Crystallization of a‐Si Low Pressure Chemically Vapor Deposited Films Obtained by Low‐Temperature Pyrolysis of Disilane

Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

Surface Treatment Effect on the Grain Size and Surface Roughness of as‐Deposited LPCVD Polysilicon Films

Low-temperature polycrystalline silicon thin-film transistors for displays

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