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Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

Nano letters, 2009-07, Vol.9 (7), p.2605-2609

2009

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Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

Crystals (Basel), 2022-09, Vol.12 (9), p.1294

2022

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Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory

Journal of applied physics, 2024-03, Vol.135 (10)

2024

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Impurity-hydrogen complexes in β-Ga2O3: Hydrogenation of shallow donors vs deep acceptors

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Chemistry of materials, 2021-12, Vol.33 (23), p.9231-9239

2021

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Impurity-derived p-type conductivity in cubic boron arsenide

Applied physics letters, 2018-12, Vol.113 (25)

2018

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Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy

Journal of physics. D, Applied physics, 2021-08, Vol.54 (31), p.31

2021

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A flux growth technique for high quality cubic boron arsenide bulk single crystals

Applied physics letters, 2023-11, Vol.123 (20)

2023

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Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

Applied physics letters, 2018-06, Vol.112 (26)

2018

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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Journal of physics. D, Applied physics, 2021-01, Vol.54 (3)

2021

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Carbon complexes in highly C-doped GaN

Physical review. B, 2021-08, Vol.104 (7), Article 075201

2021

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Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3

APL materials, 2024-07, Vol.12 (7), p.071108-071108-5

2024

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Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy

Journal of applied physics, 2018-12, Vol.124 (24)

2018

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Effect of microstructure on irradiated ferroelectric thin films

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

Semiconductor science and technology, 2017-01, Vol.32 (1), p.13005

2017

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Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

Journal of applied physics, 2016-07, Vol.120 (2)

2016

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Effect of Different Manganese Precursors on the Doping Efficiency in ZnSe Nanocrystals

Journal of physical chemistry. C, 2010-12, Vol.114 (50), p.21969-21975

2010

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Substitution of silicon within the rhombohedral boron carbide (B 4 C) crystal lattice through high-energy ball-milling

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (44), p.11705-11716

2015

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Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3−SnO2 Heterostructures for Gas Sensing Applications

Crystal growth & design, 2009-10, Vol.9 (10), p.4471-4479

2009

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Characterization of as-deposited and sintered yttrium iron garnet thick films formed by aerosol deposition

Applied physics express, 2014-03, Vol.7 (3), p.35501

2014

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Aerosol Deposition of Yttrium Iron Garnet for Fabrication of Ferrite-Integrated On-Chip Inductors

IEEE transactions on magnetics, 2015-05, Vol.51 (5), p.1-6

2015

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Growth and photoluminescence properties of vertically aligned SnO2 nanowires

Journal of crystal growth, 2009-05, Vol.311 (11), p.3158-3162

2009

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Residual impurities in GaN substrates and epitaxial layers grown by various techniques

Journal of crystal growth, 2007-07, Vol.305 (2), p.393-398

2007

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Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory

Impurity-hydrogen complexes in β-Ga2O3: Hydrogenation of shallow donors vs deep acceptors

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Impurity-derived p-type conductivity in cubic boron arsenide

Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy

A flux growth technique for high quality cubic boron arsenide bulk single crystals

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Carbon complexes in highly C-doped GaN

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity

Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3

Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy

Effect of microstructure on irradiated ferroelectric thin films

The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

Effect of Different Manganese Precursors on the Doping Efficiency in ZnSe Nanocrystals

Substitution of silicon within the rhombohedral boron carbide (B 4 C) crystal lattice through high-energy ball-milling

Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3−SnO2 Heterostructures for Gas Sensing Applications

Characterization of as-deposited and sintered yttrium iron garnet thick films formed by aerosol deposition

Aerosol Deposition of Yttrium Iron Garnet for Fabrication of Ferrite-Integrated On-Chip Inductors

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

Residual impurities in GaN substrates and epitaxial layers grown by various techniques

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