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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.65303-1-6

2013

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Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Journal of alloys and compounds, 2014-03, Vol.590, p.1-4

2014

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MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer

Journal of crystal growth, 2005-11, Vol.284 (3), p.459-463

2005

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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Journal of electronic materials, 2009-09, Vol.38 (9), p.1938-1943

2009

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Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells

Optics express, 2014-06, Vol.22 (12), p.14212-14220

2014

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Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating

Optics express, 2015-04, Vol.23 (7), p.8740-8748

2015

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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of alloys and compounds, 2013-03, Vol.554, p.104-109

2013

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Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2012-03, Vol.41 (3), p.466-470

2012

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High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Journal of alloys and compounds, 2011-02, Vol.509 (5), p.2227-2231

2011

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Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer

Optical and quantum electronics, 2013-05, Vol.45 (5), p.381-387

2013

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All-optically controlled one-dimensional photonic crystal of AlGaN film via photorefractive effect

Optics communications, 2013-10, Vol.306, p.78-82

2013

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Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field

Applied physics letters, 2010-07, Vol.97 (2), p.022102-022102-3

2010

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Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering

Journal of alloys and compounds, 2010-01, Vol.489 (2), p.519-522

2010

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Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

Journal of electronic materials, 2011-04, Vol.40 (4), p.446-452

2011

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The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

Journal of physics. Conference series, 2011-02, Vol.276 (1), p.012185-8

2011

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The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD

Journal of physics. Conference series, 2011-02, Vol.276 (1), p.012199-5

2011

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Terahertz intersubband transition in GaN/AlGaN step quantum well

Journal of applied physics, 2013-04, Vol.113 (15)

2013

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Optical-electronic hybrid Fourier convolutional neural network based on super-pixel complex-valued modulation

Applied optics (2004), 2023-02, Vol.62 (5), p.1337-1344

2023

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Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector

Plasmonics (Norwell, Mass.), 2016-06, Vol.11 (3), p.833-838

2016

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Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Production of a neutral scalar associated with a photon at the LHC in the topcolor- assisted technicolor model

Chinese physics C, 2012-06, Vol.36 (6), p.485-488

李旭鑫岳崇兴陈建兴戴杰年

2012

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Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

Journal of crystal growth, 2006-05, Vol.290 (2), p.426-430

2006

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Effect of high-temperature annealing on the structural and optical properties of ZnO films

Thin solid films, 2005-11, Vol.491 (1), p.323-327

2005

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Atmospheric pressure MOCVD growth of high-quality ZnO films on GaN/Al2O3 templates

Journal of crystal growth, 2005-09, Vol.283 (1-2), p.93-99

2005

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1 – 25 von 1.444

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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells

Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating

Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer

All-optically controlled one-dimensional photonic crystal of AlGaN film via photorefractive effect

Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field

Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering

Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD

Terahertz intersubband transition in GaN/AlGaN step quantum well

Optical-electronic hybrid Fourier convolutional neural network based on super-pixel complex-valued modulation

Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector

Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates

Production of a neutral scalar associated with a photon at the LHC in the topcolor- assisted technicolor model

Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

Effect of high-temperature annealing on the structural and optical properties of ZnO films

Atmospheric pressure MOCVD growth of high-quality ZnO films on GaN/Al2O3 templates

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