UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvester

Applied surface science, 2021-01, Vol.537, p.147871, Article 147871

2021

Volltextzugriff (PDF)

A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

Electronics (Basel), 2022-06, Vol.11 (11)

2022

Volltextzugriff (PDF)

A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-11, Vol.11 (21)

2022

Volltextzugriff (PDF)

A 0.05 m Change in Inertial Measurement Unit Placement Alters Time and Frequency Domain Metrics during Running

Sensors (Basel, Switzerland), 2024-01, Vol.24 (2), p.656

2024

Volltextzugriff (PDF)

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447

2019

Volltextzugriff (PDF)

A 0.055 mm2 Total Area Triple-Loop Wideband Fractional-N All-Digital Phase-Locked Loop Architecture for 1.9–6.1 GHz Frequency Tuning

Electronics (Basel), 2024-07, Vol.13 (13), p.2638

2024

Volltextzugriff (PDF)

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293

2020

Volltextzugriff (PDF)

A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.2, p.923-926 vol.2

2003

Volltextzugriff (PDF)

A 0.1–500 Hz analog thin film BH hysteresis loop tracer with automatic Y-axis drift correction

Review of scientific instruments, 1997-02, Vol.68 (2), p.1346-1347

1997

Volltextzugriff (PDF)

0-1 Knapsack in Nearly Quadratic Time

Proceedings of the 56th Annual ACM Symposium on Theory of Computing, 2024, p.271-282

Jin, Ce

2024

Volltextzugriff (PDF)

A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

Solid-state electronics, 1999-08, Vol.43 (8), p.1645-1654

1999

Volltextzugriff (PDF)

0/1 optimization and 0/1 primal separation are equivalent

Proceedings of the thirteenth annual ACM-SIAM symposium on Discrete algorithms, 2002, p.920-926

2002

Volltextzugriff (PDF)

0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1996-09, Vol.14 (5), p.3248-3251

1996

Volltextzugriff (PDF)

0.1 μm x-ray mask replication

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-11, Vol.9 (6), p.3319-3323

1991

Volltextzugriff (PDF)

A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.459-462

1996

Volltextzugriff (PDF)

A 0-10GHz SP16T MEMS switch for switched beam satellite antenna systems

2014 44th European Microwave Conference, 2014, p.195-198

2014

Volltextzugriff (PDF)

0.12 μm optical lithography performances using an alternating DUV phase shift mask

Microelectronic engineering, 1998-03, Vol.41, p.61-64

1998

Volltextzugriff (PDF)

A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar

2008 European Microwave Integrated Circuit Conference, 2008, p.510-513

2008

Volltextzugriff (PDF)

0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Electronics (Basel), 2020-01, Vol.9 (1), p.133

2020

Volltextzugriff (PDF)

A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from −40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology

Electronics (Basel), 2024-07, Vol.13 (14), p.2823

2024

Volltextzugriff (PDF)

0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721

1998

Volltextzugriff (PDF)

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

Solid-state electronics, 2003, Vol.47 (1), p.117-122

2003

Volltextzugriff (PDF)

A 0.17 pJ/bit 28 Gb/s/pin Single-Ended PAM-4 Transmitter for On-Chip Short-Reach Unterminated Channels

Electronics (Basel), 2022-08, Vol.11 (16), p.2525

2022

Volltextzugriff (PDF)

0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-11, Vol.16 (6), p.3398-3404

1998

Volltextzugriff (PDF)

0.18-μm Nondestructive readout FeRAM using charge compensation technique

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621

2005

Volltextzugriff (PDF)

1 – 25 von 1.498.492

Suche als RSS-Feed

Aktive Filter

ThemaPhysical Sciences

ThemaTechnology

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.364.043)
Mit Volltextzugriff
(1.378.147)

Publikationsform

Artikel
(1.415.595)
Tagungsberichte
(59.928)
Buchkapitel
(20.200)
magazinearticle
(1.853)
Bücher
(887)
Reviews
(25)
Dissertationen
(3)
Webseiten
(1)

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(1.498.412)
Japanisch
(159.418)
Französisch
(2.947)
Russisch
(1.105)
Deutsch
(468)
Portugiesisch
(387)
Norwegisch
(368)
Chinesisch
(311)
Spanisch
(62)
Polnisch
(52)
Ukrainisch
(17)
Koreanisch
(15)
Katalanisch
(9)
Schwedisch
(7)
Dänisch
(6)
Afrikaans
(5)
Niederländisch
(5)
Welsh
(5)
Italienisch
(2)

14 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(1.497.853)
Physics
(739.061)
Materials Science
(726.089)
Materials Science, Multidisciplinary
(630.360)
Chemistry
(580.589)
Physics, Applied
(544.522)
Engineering
(521.065)
Chemistry, Physical
(311.793)
Physics, Condensed Matter
(243.620)
Exact Sciences And Technology
(225.411)
Science & Technology - Other Topics
(214.612)
Nanoscience & Nanotechnology
(205.211)
Chemistry, Multidisciplinary
(204.220)
Engineering, Electrical & Electronic
(201.329)
Mathematics
(136.860)
Instruments & Instrumentation
(135.345)
Metallurgy & Metallurgical Engineering
(131.830)
Computer Science
(125.662)

13 weitere anzeigen...

Weniger anzeigen...

Kollektion

Ingenta
(843.141)
EZB Free E-Journals
(396.424)
IngentaConnect Journals
(374.551)
Elsevier ScienceDirect Journals Complete
(329.685)
Springer Journals
(188.901)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(165.527)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(164.042)
Wiley Online Library Journals Frontfile Complete
(159.581)
Wiley Online Library Full Collection 2018
(118.963)
MEDLINE
(90.716)
WK Lippincott Williams & Wilkins–Connect here FIRST to enable access
(83.934)
Scitation (American Institute of Physics)
(83.440)
Single Journals
(81.912)
Taylor & Francis
(73.445)
Taylor & Francis:Master (3349 titles)
(72.758)
IEEE/IET Electronic Library (IEL)
(66.712)
Taylor & Francis Journals
(63.815)
American Physical Society Journals
(31.778)
PROLA - Physical Review Online Archive
(24.934)
eBooks on EBSCOhost
(21.326)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Journal Of Alloys And Compounds
(65.365)
Applied Sciences
(46.546)
Sensors
(44.586)
Materials
(33.348)
Review Of Scientific Instruments
(30.708)
Remote Sensing
(22.886)
Advanced Materials
(16.603)
Physical Review. B
(16.344)
Physical Review. B, Condensed Matter
(15.584)
Advanced Functional Materials
(15.432)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(885)
... seit 90 Tagen
(17.517)

Menü

Weitere Dienste

Einstellungen

[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvester

A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.05 m Change in Inertial Measurement Unit Placement Alters Time and Frequency Domain Metrics during Running

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

A 0.055 mm2 Total Area Triple-Loop Wideband Fractional-N All-Digital Phase-Locked Loop Architecture for 1.9–6.1 GHz Frequency Tuning

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections

A 0.1–500 Hz analog thin film BH hysteresis loop tracer with automatic Y-axis drift correction

0-1 Knapsack in Nearly Quadratic Time

A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

0/1 optimization and 0/1 primal separation are equivalent

0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal

0.1 μm x-ray mask replication

A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process

A 0-10GHz SP16T MEMS switch for switched beam satellite antenna systems

0.12 μm optical lithography performances using an alternating DUV phase shift mask

A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar

0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from −40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology

0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

A 0.17 pJ/bit 28 Gb/s/pin Single-Ended PAM-4 Transmitter for On-Chip Short-Reach Unterminated Channels

0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling

0.18-μm Nondestructive readout FeRAM using charge compensation technique

Aktive Filter

Suchergebnisse filtern