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Terahertz cyclotron emission from two-dimensional Dirac fermions

Nature photonics, 2023-03, Vol.17 (3), p.244-249

2023

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Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

Nature photonics, 2019-11, Vol.13 (11), p.783-787

2019

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Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Journal of applied physics, 2021-12, Vol.130 (21)

2021

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Stimulated emission in the 2.8-3.5 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures

Optics express, 2018-05, Vol.26 (10), p.12755-12760

2018

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Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions

APL photonics, 2023-11, Vol.8 (11), p.244-249

2023

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Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations

Physical review. B, 2020-08, Vol.102 (7), p.1, Article 075302

2020

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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Russian physics journal, 2020-06, Vol.63 (2), p.290-295

2020

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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12097

2016

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Determining the Compositional Profile of HgTe/CdxHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry

Optics and spectroscopy, 2019-08, Vol.127 (2), p.340-346

2019

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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Infrared physics & technology, 2017-12, Vol.87, p.129-133

2017

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Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method

Optoelectronics, instrumentation, and data processing, 2021-09, Vol.57 (5), p.458-467

2021

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Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T

Opto-electronics review, 2019-06, Vol.27 (2), p.213-218

2019

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CdHgTe-based nanostructures for photodetectors

Journal of optical technology, 2009-12, Vol.76 (12), p.787

2009

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Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

Journal of optical technology, 2009-12, Vol.76 (12), p.777

2009

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Comparison of the current characteristics of photodiodes formed on CdHgTe films grown by molecular-beam and liquid-phase epitaxy for the 8-12-μm spectral range

Journal of optical technology, 2009-12, Vol.76 (12), p.767

2009

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Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.456-469

2020

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Advanced Design of Scanning Infrared Focal Plane Arrays

Optoelectronics, instrumentation, and data processing, 2018-11, Vol.54 (6), p.569-575

2018

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Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes

Optoelectronics, instrumentation, and data processing, 2017-11, Vol.53 (6), p.630-638

2017

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Cell of the silicon integrated reading circuit with built-it analog-digital converter

Optoelectronics, instrumentation, and data processing, 2016-07, Vol.52 (4), p.381-387

2016

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

Russian physics journal, 2017, Vol.60 (2), p.360-370

2017

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Growing of HgCdTe heterostructures with in situ ellipsometric control

Optoelectronics, instrumentation, and data processing, 2011-10, Vol.47 (5), p.426-435

2011

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Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–xCdxTe (x = 0.23) in a Wide Temperature Range

Russian physics journal, 2014, Vol.57 (4), p.536-544

2014

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Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy

Russian physics journal, 2013, Vol.55 (8), p.910-916

2013

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Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–хCdхTe (x =0.22–0.23) Grown by Molecular Beam Epitaxy

Russian physics journal, 2014-10, Vol.57 (6), p.707-716

2014

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Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Opto-electronics review, 2010, Vol.18 (3), p.259-262

2010

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Terahertz cyclotron emission from two-dimensional Dirac fermions

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Stimulated emission in the 2.8-3.5 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures

Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions

Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations

Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

Determining the Compositional Profile of HgTe/CdxHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method

Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T

CdHgTe-based nanostructures for photodetectors

Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

Comparison of the current characteristics of photodiodes formed on CdHgTe films grown by molecular-beam and liquid-phase epitaxy for the 8-12-μm spectral range

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Advanced Design of Scanning Infrared Focal Plane Arrays

Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes

Cell of the silicon integrated reading circuit with built-it analog-digital converter

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

Growing of HgCdTe heterostructures with in situ ellipsometric control

Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–xCdxTe (x = 0.23) in a Wide Temperature Range

Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy

Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–хCdхTe (x =0.22–0.23) Grown by Molecular Beam Epitaxy

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

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