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A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges
IEEE electron device letters, 2010-08, Vol.31 (8), p.788-790
2010
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Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors
2009 IEEE International Reliability Physics Symposium, 2009, p.174-179
2009
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A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges
IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.567-571
2011
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Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap's Emission
IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4720-4727
2020
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Electron trapping and interface trap generation in drain extended PMOS transistors
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.555-559
2005
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Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET
Journal of computational electronics, 2018-09, Vol.17 (3), p.1249-1256
2018
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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
IEEE transactions on electron devices, 2002-07, Vol.49 (7), p.1283-1288
2002
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Combined effect of NBTI and channel hot carrier effects in pMOSFETs
2005 IEEE International Integrated Reliability Workshop, 2005, p.7 pp.
2005
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Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores
IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.132-139
2013
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The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stress
IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1488-1490
2002
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Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.275-279
2005
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Lifetime prediction of ultra-thin gate oxide PMOSFETs submitted to hot hole injections
2005 IEEE International Integrated Reliability Workshop, 2005, p.5 pp.
2005
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Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs
30th European Solid-State Device Research Conference, 2000, p.132-135
2000
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In-circuit hot-carrier model and its application to inverter chain optimization
IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1428-1432
1996
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A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability
IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.563-571
2007
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Comparative study of drift region designs in RF LDMOSFETs
IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1296-1303
2004
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Hot-carrier effects in MOSFET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processing
IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.134-147
1992
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Hot-Carrier Reliability and Analog Performance Investigation of DMG-ISEGaS MOSFET
IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2556-2561
2007
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Projecting lifetime of deep submicron MOSFETs
IEEE transactions on electron devices, 2001-04, Vol.48 (4), p.671-678
2001
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Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors
2007 IEEE International Conference on Integrated Circuit Design and Technology, 2007, p.1-4
2007
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Analysis of the DCIV peaks in electrically stressed pMOSFETs
IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.913-920
2001
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Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFETs
IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2384-2390
1988
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Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature
IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1207-1215
2001
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A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability
Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614), 2002, p.80-83
2002
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Effect of Self-Heating on HCI Lifetime Prediction in SOI Technologies
2006 IEEE International Integrated Reliability Workshop Final Report, 2006, p.54-58
2006
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