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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4331-4338

2016

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An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances

IEEE access, 2024, Vol.12, p.69009-69014

2024

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Single-Pulse Avalanche Failure Investigations of Si-SJ-mosfet and SiC-mosfet by Step-Control Infrared Thermography Method

IEEE transactions on power electronics, 2020-05, Vol.35 (5), p.5180-5189

2020

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Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2748-2757

2019

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Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5593-5599

2020

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Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5440-5447, Article 5440

2018

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Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8990-9005

2023

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Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1191-1195

2022

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Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains

IEEE transactions on power electronics, 2022-01, Vol.37 (1), p.55-58

2022

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Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11299-11303

2020

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Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

IEEE transactions on power electronics, 2022-10, Vol.37 (10), p.11507-11510

2022

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Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.6086-6092

2023

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Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress

IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.6009-6017

2022

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Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.546-552

2019

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Quasisaturation Effect and Optimization for 4H-SiC Trench MOSFET With P+ Shielding Region

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4550-4556

2021

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Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.2447-2447

2021

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Performance Boosts in n-Type Lateral Double-Diffused MOSFET With Process-Induced Strain Using Contact Etch Stop Layer Stressor

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.421-424

2021

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Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.1012-1017

2019

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Verification of Single-Pulse Avalanche Failure Mechanism for Double-Trench SiC Power MOSFETs

IEEE journal of emerging and selected topics in power electronics, 2021-04, Vol.9 (2), p.2190-2200

2021

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A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control

IEEE journal of emerging and selected topics in power electronics, 2024-04, Vol.12 (2), p.1834-1846

2024

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Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

IEEE journal of emerging and selected topics in power electronics, 2021-04, Vol.9 (2), p.2180-2189

2021

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Degradation Investigations on Asymmetric Trench SiC Power MOSFETs Under Repetitive Unclamped Inductive Switching Stress

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.239-242

2021

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Influence of Structure Parameters on the RoN, sp of Quasi- Vertical Power DMOS Compatible with 0.18μm BCD Process

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.418-421

2024

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Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.399-402

2018

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Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 501

2017

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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances

Single-Pulse Avalanche Failure Investigations of Si-SJ-mosfet and SiC-mosfet by Step-Control Infrared Thermography Method

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains

Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure

Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress

Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

Quasisaturation Effect and Optimization for 4H-SiC Trench MOSFET With P+ Shielding Region

Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

Performance Boosts in n-Type Lateral Double-Diffused MOSFET With Process-Induced Strain Using Contact Etch Stop Layer Stressor

Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain

Verification of Single-Pulse Avalanche Failure Mechanism for Double-Trench SiC Power MOSFETs

A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Degradation Investigations on Asymmetric Trench SiC Power MOSFETs Under Repetitive Unclamped Inductive Switching Stress

Influence of Structure Parameters on the RoN, sp of Quasi- Vertical Power DMOS Compatible with 0.18μm BCD Process

Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress

Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs

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