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Using Memristors for Robust Local Learning of Hardware Restricted Boltzmann Machines

Scientific reports, 2019-02, Vol.9 (1), p.1851-1851, Article 1851

2019

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Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations

Nature communications, 2022-02, Vol.13 (1), p.1016-1016, Article 1016

2022

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Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays

Frontiers in neuroscience, 2020-01, Vol.13, p.1383-1383

2020

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Energy Efficient Learning With Low Resolution Stochastic Domain Wall Synapse for Deep Neural Networks

IEEE access, 2022, Vol.10, p.84946-84959

2022

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Stochastic Computing for Hardware Implementation of Binarized Neural Networks

IEEE access, 2019-01, Vol.7, p.76394-76403

2019

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Proposal for a graphene-based all-spin logic gate

Applied physics letters, 2015-02, Vol.106 (7)

2015

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Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Advanced intelligent systems, 2022-11, Vol.4 (11), p.n/a

2022

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Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Solid-state electronics, 2013-09, Vol.87, p.51-57

2013

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Reservoir computing with the frequency, phase, and amplitude of spin-torque nano-oscillators

Applied physics letters, 2019-01, Vol.114 (1)

2019

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Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Journal of computational electronics, 2013-06, Vol.12 (2), p.85-93

2013

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Use of Magnetoresistive Random-Access Memory as Approximate Memory for Training Neural Networks

2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2018, p.553-556

2018

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Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation Per Synapse

IEEE transactions on circuits and systems. I, Regular papers, 2021-01, Vol.68 (1), p.138-147

2021

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IEEE_Xplore

Role of synaptic variability in resistive memory-based spiking neural networks with unsupervised learning

Journal of physics. D, Applied physics, 2018-11, Vol.51 (44)

2018

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Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

IEEE transactions on circuits and systems. I, Regular papers, 2014-02, Vol.61 (2), p.443-454

2014

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IEEE_Xplore

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2232-2242

2007

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IEEE_Xplore

In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications

2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2020, p.690-695

2020

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IEEE_Xplore

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.985-991

2013

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IEEE_Xplore

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Multiscale simulation of carbon nanotube transistors

Solid-state electronics, 2013-11, Vol.89, p.26-67

2013

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On the non-linear effects in graphene devices

Journal of physics. D, Applied physics, 2014-03, Vol.47 (9), p.94007

2014

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Decoherence effects in the Wigner function formalism

Journal of computational electronics, 2013-09, Vol.12 (3), p.388-396

2013

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Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction

2011 International Electron Devices Meeting, 2011, p.4.4.1-4.4.4

2011

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IEEE_Xplore

Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2020, p.136-140

2020

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Learning with memristive devices: How should we model their behavior?

2011 IEEE/ACM International Symposium on Nanoscale Architectures, 2011, p.150-156

2011

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IEEE_Xplore

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Using Memristors for Robust Local Learning of Hardware Restricted Boltzmann Machines

Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations

Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays

Energy Efficient Learning With Low Resolution Stochastic Domain Wall Synapse for Deep Neural Networks

Stochastic Computing for Hardware Implementation of Binarized Neural Networks

Proposal for a graphene-based all-spin logic gate

Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Reservoir computing with the frequency, phase, and amplitude of spin-torque nano-oscillators

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Use of Magnetoresistive Random-Access Memory as Approximate Memory for Training Neural Networks

Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation Per Synapse

Role of synaptic variability in resistive memory-based spiking neural networks with unsupervised learning

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Multiscale simulation of carbon nanotube transistors

On the non-linear effects in graphene devices

Decoherence effects in the Wigner function formalism

Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction

Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

Learning with memristive devices: How should we model their behavior?

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