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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

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AlGaN devices and growth of device structures

Journal of materials science, 2015-05, Vol.50 (9), p.3267-3307

2015

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Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

Applied physics letters, 2008-10, Vol.93 (17)

2008

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Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

Journal of electronic materials, 2000-01, Vol.29 (1), p.69-74

2000

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Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

Journal of alloys and compounds, 2013-03, Vol.552, p.127-130

2013

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In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

Applied physics letters, 2009-03, Vol.94 (9)

2009

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Effect of polarity on Ni/InN interfacial reactions

Applied physics letters, 2013-01, Vol.102 (2)

2013

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Optimization of Annealing Process for Improved InGaN Solar Cell Performance

Journal of electronic materials, 2013-12, Vol.42 (12), p.3467-3470

2013

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Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

Journal of electronic materials, 2006-04, Vol.35 (4), p.641-646

2006

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First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

Physica status solidi. C, 2008-05, Vol.5 (6), p.2244-2246

2008

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InN layers grown by the HVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1792-1794

2008

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Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.846-849

2005

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GaN doped with neodymium by plasma-assisted molecular beam epitaxy

Applied physics letters, 2008-02, Vol.92 (6), p.061108-061108-3

2008

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Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Physica status solidi. C, 2008-05, Vol.5 (6), p.2303-2305

2008

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Time-resolved photoluminescence studies of high-brightness 340-nm LEDs under current injection

Physica status solidi. C, 2008-05, Vol.5 (6), p.2296-2298

2008

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Luminescence properties of AlxGa1-xN(0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

Physica status solidi. C, 2008-05, Vol.5 (6), p.1852-1854

2008

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Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells

Physica status solidi. C, 2008-05, Vol.5 (6), p.1846-1848

2008

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Time-resolved reflectivity studies of coherent longitudinal acoustic phonon pulses in bulk III-nitride semiconductors

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.790-794

2005

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Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

Physica status solidi. C, 2006-06, Vol.3 (6), p.2125-2128

2006

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(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

ECS transactions, 2014, Vol.61 (4), p.227-234

2014

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Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Optical materials express, 2011-05, Vol.1 (1), p.78-84

2011

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Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors

MRS proceedings, 2003, Vol.798, Article Y6.10

2003

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Defect density dependence of carrier dynamics in AlGaN multiple quantum wells grown on GaN substrates and templates

Physica status solidi. C, 2005-05, Vol.2 (7), p.2332-2336

2005

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Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.807-810

2001

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Deep UV light emitting diodes grown by gas source molecular beam epitaxy

Journal of materials science. Materials in electronics, 2008-09, Vol.19 (8-9), p.764-769

2008

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

AlGaN devices and growth of device structures

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

Effect of polarity on Ni/InN interfacial reactions

Optimization of Annealing Process for Improved InGaN Solar Cell Performance

Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

InN layers grown by the HVPE

Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN

GaN doped with neodymium by plasma-assisted molecular beam epitaxy

Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Time-resolved photoluminescence studies of high-brightness 340-nm LEDs under current injection

Luminescence properties of AlxGa1-xN(0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells

Time-resolved reflectivity studies of coherent longitudinal acoustic phonon pulses in bulk III-nitride semiconductors

Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors

Defect density dependence of carrier dynamics in AlGaN multiple quantum wells grown on GaN substrates and templates

Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

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