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RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis

Applied surface science, 2020-03, Vol.506, p.144668, Article 144668

2020

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Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Journal of materials science, 2020-07, Vol.55 (21), p.8992-9002

2020

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Effect of photocatalytic oxidation technology on GaN CMP

Applied surface science, 2016-01, Vol.361, p.18-24

2016

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Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing

Electronic Materials Letters, 2023, 19(6), , pp.580-587

2023

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Chemical effects on the tribological behavior during copper chemical mechanical planarization

Materials chemistry and physics, 2015-03, Vol.153, p.48-53

2015

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Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry

Applied surface science, 2014-11, Vol.320, p.531-537

2014

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Fabrication of Flexible and Transparent Metal Mesh Electrodes Using Surface Energy‐Directed Assembly Process for Touch Screen Panels and Heaters

Advanced science, 2023-12, Vol.10 (34), p.e2304990-n/a

2023

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Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling

Applied surface science, 2013-01, Vol.265, p.764-770

2013

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Effect of a Cu seed layer on electroplated Cu film

Microelectronic engineering, 2013-05, Vol.105, p.18-24

2013

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Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process

Science China. Technological sciences, 2013-08, Vol.56 (8), p.1974-1979

2013

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The role of dipotassium ethylenediaminetetraacetic acid and potassium oleate on chemical mechanical planarization relevant to heterogeneous materials of cobalt interconnects

Materials science in semiconductor processing, 2023-06, Vol.160, p.107410, Article 107410

2023

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Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

Applied surface science, 2016-08, Vol.378, p.130-135

2016

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Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing

Applied surface science, 2015-10, Vol.351, p.401-409

2015

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The Role of Diethanolamine on Chemical Mechanical Polishing in Alkaline Glycine-Based Slurries for Cobalt Interconnects

ECS journal of solid state science and technology, 2023-04, Vol.12 (4), p.44006

2023

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Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

ECS journal of solid state science and technology, 2023-07, Vol.12 (7), p.74007

2023

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Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

Applied surface science, 2015-05, Vol.337, p.130-137

2015

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A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process

Thin solid films, 2017-08, Vol.636, p.240-246

2017

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All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process

ACS nano, 2024-07, Vol.18 (31), p.20493-20503

2024

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Mechanism Analysis of Megasonic and Brush Cleaning Processes for Silicon Substrate after Chemical Mechanical Polishing

ECS journal of solid state science and technology, 2022-10, Vol.11 (10), p.104004

2022

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Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms

ACS applied electronic materials, 2023-12, Vol.5 (12), p.6884-6896

2023

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Galvanic Corrosion Inhibitors for Cu/Ru Couple during Chemical Mechanical Polishing of Ru

ECS journal of solid state science and technology, 2017-01, Vol.6 (1), p.P62-P67

2017

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Corrosion Investigations of Ruthenium in Potassium Periodate Solutions Relevant for Chemical Mechanical Polishing

Journal of electronic materials, 2016-08, Vol.45 (8), p.4067-4075

2016

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Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN as Barrier/Liner Layer

ECS journal of solid state science and technology, 2018, Vol.7 (11), p.P634-P639

2018

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Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Tribology letters, 2015-04, Vol.58 (1), p.1-11, Article 8

2015

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Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

Journal of the Electrochemical Society, 2012-01, Vol.159 (3), p.H342-H348

2012

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RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Effect of photocatalytic oxidation technology on GaN CMP

Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry

Fabrication of Flexible and Transparent Metal Mesh Electrodes Using Surface Energy‐Directed Assembly Process for Touch Screen Panels and Heaters

Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling

Effect of a Cu seed layer on electroplated Cu film

Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process

The role of dipotassium ethylenediaminetetraacetic acid and potassium oleate on chemical mechanical planarization relevant to heterogeneous materials of cobalt interconnects

Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing

The Role of Diethanolamine on Chemical Mechanical Polishing in Alkaline Glycine-Based Slurries for Cobalt Interconnects

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process

All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process

Mechanism Analysis of Megasonic and Brush Cleaning Processes for Silicon Substrate after Chemical Mechanical Polishing

Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms

Galvanic Corrosion Inhibitors for Cu/Ru Couple during Chemical Mechanical Polishing of Ru

Corrosion Investigations of Ruthenium in Potassium Periodate Solutions Relevant for Chemical Mechanical Polishing

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN as Barrier/Liner Layer

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

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