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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Materials science forum, 2004-01, Vol.457-460, p.779-782

2004

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Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

Thin solid films, 2001-01, Vol.381 (2), p.244-250

2001

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Luminescence Properties of Er Implanted Polycrystalline 3C SiC

Materials science forum, 1998-01, Vol.264-268, p.505-508

1998

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Analysis of reaction gases flow in CVD processes

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-12, Vol.35 (1), p.156-159

1995

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Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1998-09, Vol.253 (1-2), p.284-291

1998

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Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Thin solid films, 1995-12, Vol.270 (1-2), p.406-410

1995

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Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Applied surface science, 1996-07, Vol.100, p.498-502

1996

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Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Physics procedia, 2012, Vol.23, p.9-12

2012

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Photoluminescence from Ge/Si Nanocrystals Embedded in Silicon Oxide Matrix Annealed in Hydrogen Gas

MRS proceedings, 2008, Vol.1145 (1), Article 1145-MM04-11

2008

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Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Physics procedia, 2012, Vol.23, p.69-72

2012

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Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Physics procedia, 2012, Vol.23, p.13-16

2012

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Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Journal of the Electrochemical Society, 2005, Vol.152 (6), p.G506

2005

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Hydrodynamic description of epitaxial film growth in a horizontal reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.61-65

1997

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Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Japanese Journal of Applied Physics, 1994, Vol.33 (5A), p.2679-2683

1994

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Light Emission from Er-Implanted Silicon Using Anodization

Materials science forum, 1995-01, Vol.196-201, p.603-608

1995

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Optical Direct and Indirect Excitation of Er3+ Ions In Silicon

MRS proceedings, 1993, Vol.301

1993

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Optical Activity of Yb3+ in MeV Ion-Implanted InP

MRS proceedings, 1993, Vol.301

1993

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Optical Direct and Indirect Excitation of Er3+ Ions in Silicon

MRS proceedings, 1993, Vol.298

1993

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Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

MRS proceedings, 1995, Vol.388, Article 241

1995

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Luminescence Properties of Eu ion-implanted GaN

MRS proceedings, 2003, Vol.798, Article Y5.7

2003

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Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Thin solid films, 1996-08, Vol.281-282, p.252-255

1996

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A New Cleaning Technique for Corrosion Protection in Aluminum Metallization

MRS proceedings, 2003, Vol.767, Article F7.2

2003

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New PL emission lines in ion-implanted ultrapure LEC InP

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.626-629

1992

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Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

MRS proceedings, 1998-01, Vol.510, Article 163

1998

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Photoluminescence excitation spectra from undoped InP

1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.630-633

1993

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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

Luminescence Properties of Er Implanted Polycrystalline 3C SiC

Analysis of reaction gases flow in CVD processes

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering

Photoluminescence from Ge/Si Nanocrystals Embedded in Silicon Oxide Matrix Annealed in Hydrogen Gas

Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin

Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Hydrodynamic description of epitaxial film growth in a horizontal reactor

Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Light Emission from Er-Implanted Silicon Using Anodization

Optical Direct and Indirect Excitation of Er3+ Ions In Silicon

Optical Activity of Yb3+ in MeV Ion-Implanted InP

Optical Direct and Indirect Excitation of Er3+ Ions in Silicon

Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

Luminescence Properties of Eu ion-implanted GaN

Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

A New Cleaning Technique for Corrosion Protection in Aluminum Metallization

New PL emission lines in ion-implanted ultrapure LEC InP

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

Photoluminescence excitation spectra from undoped InP

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