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Investigation of the irradiation effects in additively manufactured 316L steel resulting in decreased irradiation assisted stress corrosion cracking susceptibility

Journal of nuclear materials, 2021-03, Vol.545 (C), p.152739, Article 152739

2021

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Laser-written polymeric scaffolds for micro-patterned liquid crystal alignment

Liquid crystals, 2019-11, Vol.46 (13-14), p.2075-2084

2019

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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch

Materials science forum, 2009, Vol.600-603, p.901-906

2009

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A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses

Materials science forum, 2010-01, Vol.645-648, p.885-888

2010

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Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Materials science forum, 2001-01, Vol.353-356, p.679-682

2001

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Elevated-Temperature Elastic Properties of Alloys 709 and 617 Measured by Laser Ultrasound

Journal of materials engineering and performance, 2021-02, Vol.30 (2), p.1513-1520

2021

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A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

Materials science forum, 2006-01, Vol.527-529, p.1155-1158

2006

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Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

Materials science forum, 2010-01, Vol.645-648, p.565-568

2010

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Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

Materials science forum, 2010-01, Vol.645-648, p.359-362

2010

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Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

Materials science forum, 2004-01, Vol.457-460, p.981-984

2004

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Theory of Neutral Divacancy in SiC: A Defect for Spintronics

Materials science forum, 2010-01, Vol.645-648, p.395-397

2010

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Quasi-Freestanding Graphene on SiC(0001)

Materials science forum, 2010-01, Vol.645-648, p.629-632

2010

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Magnetic and optical anisotropy in garnets induced by spatially modulated elliptically polarized light

Journal of magnetism and magnetic materials, 2001-05, Vol.226, p.958-960

2001

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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Materials science forum, 2010-01, Vol.645-648, p.13-16

2010

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SiC-bulk growth by physical-vapor transport and its global modelling

Journal of crystal growth, 1997-04, Vol.174 (1), p.669-674

1997

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Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Materials science forum, 2010-01, Vol.645-648, p.969-974

2010

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Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.125-129

1999

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First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.37-41

1995

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Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices

Materials Science Forum, 2016-05, Vol.858, p.531-534

2016

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Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

Materials science forum, 2010-01, Vol.645-648, p.913-916

2010

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6.5 kV SiC PiN Diodes with Improved Forward Characteristics

Materials science forum, 2010-01, Vol.645-648, p.901-904

2010

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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Materials science forum, 1998-01, Vol.264-268, p.89-96

1998

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Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

Materials science forum, 2010-01, Vol.645-648, p.685-688

2010

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Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

Materials science forum, 2010-01, Vol.645-648, p.143-146

2010

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Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration

Materials science forum, 2010-01, Vol.645-648, p.247-250

2010

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Investigation of the irradiation effects in additively manufactured 316L steel resulting in decreased irradiation assisted stress corrosion cracking susceptibility

Laser-written polymeric scaffolds for micro-patterned liquid crystal alignment

SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch

A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses

Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Elevated-Temperature Elastic Properties of Alloys 709 and 617 Measured by Laser Ultrasound

A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

Theory of Neutral Divacancy in SiC: A Defect for Spintronics

Quasi-Freestanding Graphene on SiC(0001)

Magnetic and optical anisotropy in garnets induced by spatially modulated elliptically polarized light

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

SiC-bulk growth by physical-vapor transport and its global modelling

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison

First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices

Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

6.5 kV SiC PiN Diodes with Improved Forward Characteristics

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration

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