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AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

Applied physics letters, 2014-05, Vol.104 (18)

2014

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Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates

Journal of crystal growth, 2015-08, Vol.424, p.11-13

2015

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Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy

Physica Status Solidi (b), 2011-04, Vol.248 (4), p.956-959

2011

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Observation of optical anisotropy of highly uniform InAs quantum dots

Journal of crystal growth, 2013-09, Vol.378, p.463-465

2013

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Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

APL materials, 2016-07, Vol.4 (7)

2016

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Characteristics of InN grown directly on Al2O3 (0001) substrates by pulsed laser deposition

Journal of crystal growth, 2009-02, Vol.311 (5), p.1316-1320

2009

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ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

Journal of physics. Conference series, 2013-01, Vol.417 (1), p.12005-6

2013

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Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

Journal of crystal growth, 2008-10, Vol.310 (21), p.4535-4538

2008

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Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2010-04, Vol.4 (3-4), p.88-90

2010

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Epitaxial growth of InN films on lattice-matched EuN buffer layers

Journal of crystal growth, 2009-10, Vol.311 (20), p.4483-4485

2009

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Fabrication of densely packed arrays of GaN nanostructures on nano-imprinted substrates

Journal of crystal growth, 2011-03, Vol.319 (1), p.102-105

2011

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InN epitaxial growths on Yttria stabilized zirconia (111) step substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2487-2489

2004

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Growth of group III nitride nanostructures on nano-imprinted sapphire substrates

Thin solid films, 2011-07, Vol.519 (19), p.6534-6537

2011

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Growth of group III nitride films by pulsed electron beam deposition

Journal of solid state chemistry, 2009-05, Vol.182 (5), p.1241-1244

2009

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Growth temperature dependence of structural properties for AlN films grown on (Mn, Zn)Fe2O4 substrates

Thin solid films, 2003-07, Vol.435 (1-2), p.218-221

2003

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Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

Journal of solid state chemistry, 2009-10, Vol.182 (10), p.2887-2889

2009

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Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates

Applied surface science, 2002-05, Vol.190 (1), p.352-355

2002

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Growth of cubic InN films with high phase purity by pulsed laser deposition

Journal of crystal growth, 2009-05, Vol.311 (11), p.3130-3132

2009

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Growth of epitaxial AlN films on (Mn,Zn)Fe2O4 substrates by pulsed laser deposition

Applied surface science, 2002-09, Vol.197-198, p.486-489

2002

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RHEED and XPS study of GaN on Si(1 1 1) grown by pulsed laser deposition

Journal of crystal growth, 2001-12, Vol.233 (4), p.779-784

2001

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Growth of GaN on nearly lattice matched MnO substrates by pulsed laser deposition

Applied surface science, 2002-09, Vol.197, p.384-386

2002

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Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition

Thin solid films, 2003-07, Vol.435 (1), p.215-217

2003

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Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics

Applied surface science, 2008-12, Vol.255 (5), p.2149-2152

2008

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Heteroepitaxial growth of GaN on atomically flat LiTaO3 (0001) using low-temperature AIN buffer layers

Journal of crystal growth, 2006-07, Vol.293 (1), p.22-26

2006

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Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

Thin solid films, 2004-06, Vol.457 (1), p.109-113

2004

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AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates

Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy

Observation of optical anisotropy of highly uniform InAs quantum dots

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

Characteristics of InN grown directly on Al2O3 (0001) substrates by pulsed laser deposition

ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates

Epitaxial growth of InN films on lattice-matched EuN buffer layers

Fabrication of densely packed arrays of GaN nanostructures on nano-imprinted substrates

InN epitaxial growths on Yttria stabilized zirconia (111) step substrates

Growth of group III nitride nanostructures on nano-imprinted sapphire substrates

Growth of group III nitride films by pulsed electron beam deposition

Growth temperature dependence of structural properties for AlN films grown on (Mn, Zn)Fe2O4 substrates

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates

Growth of cubic InN films with high phase purity by pulsed laser deposition

Growth of epitaxial AlN films on (Mn,Zn)Fe2O4 substrates by pulsed laser deposition

RHEED and XPS study of GaN on Si(1 1 1) grown by pulsed laser deposition

Growth of GaN on nearly lattice matched MnO substrates by pulsed laser deposition

Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition

Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics

Heteroepitaxial growth of GaN on atomically flat LiTaO3 (0001) using low-temperature AIN buffer layers

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

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