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A Simulation Model for Wet Cleaning of Deep Trenches

Journal of the Electrochemical Society, 1990-07, Vol.137 (7), p.2303-2305

1990

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Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations

Journal of the Electrochemical Society, 1986-05, Vol.133 (5), p.996-998

1986

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Performance evaluation of CMOS ring-oscillators with source/drain regions fabricated by asymmetric/symmetric ion-implantation

1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.131-136

1997

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Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

MRS proceedings, 1999, Vol.568, Article 19

1999

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Modeling of {311} Defects

MRS proceedings, 1999, Vol.568, Article 123

1999

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Transient Enhanced Diffusion and Dose Loss of Indium in Silicon

MRS proceedings, 1999, Vol.568, Article 205

1999

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Diffusion Mechanisms in Sige Alloys

MRS proceedings, 1999, Vol.568, Article 253

1999

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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

MRS proceedings, 1999, Vol.568, Article 55

1999

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Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

MRS proceedings, 1999, Vol.568, Article 219

1999

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Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

MRS proceedings, 1999, Vol.568, Article 245

1999

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Decaborane as Ion Source Material for Boron Implantation

MRS proceedings, 1999, Vol.568, Article 49

1999

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Comparison of Ultra-low-energy Ion Implantation of Boron and BF2

MRS proceedings, 1999, Vol.568

1999

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Atomistic Simulations of Damage Evolution in Silicon

MRS proceedings, 1999, Vol.568, Article 135

1999

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Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

MRS proceedings, 1999, Vol.568, Article 271

1999

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On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

MRS proceedings, 1999, Vol.568, Article 141

1999

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Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

MRS proceedings, 1999, Vol.568, Article 91

1999

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Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

MRS proceedings, 1999, Vol.568, Article 163

1999

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Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

MRS proceedings, 1999, Vol.568, Article 9

1999

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Nitrogen Implantation and Diffusion in Silicon

MRS proceedings, 1999, Vol.568, Article 277

1999

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Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

MRS proceedings, 1999, Vol.568, Article 199

1999

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Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation

MRS proceedings, 1999, Vol.568, Article 15

1999

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The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige

MRS proceedings, 1999, Vol.568, Article 103

1999

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Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers

MRS proceedings, 1999, Vol.568, Article 3

1999

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Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

MRS proceedings, 1999, Vol.568, Article 213

1999

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Non Destructive Profile Measurements of Annealed Shallow Implants

MRS proceedings, 1999, Vol.568, Article 239

1999

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A Simulation Model for Wet Cleaning of Deep Trenches

Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations

Performance evaluation of CMOS ring-oscillators with source/drain regions fabricated by asymmetric/symmetric ion-implantation

Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

Modeling of {311} Defects

Transient Enhanced Diffusion and Dose Loss of Indium in Silicon

Diffusion Mechanisms in Sige Alloys

Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

Decaborane as Ion Source Material for Boron Implantation

Comparison of Ultra-low-energy Ion Implantation of Boron and BF2

Atomistic Simulations of Damage Evolution in Silicon

Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Nitrogen Implantation and Diffusion in Silicon

Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation

The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige

Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

Non Destructive Profile Measurements of Annealed Shallow Implants

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