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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-micro letters, 2021-01, Vol.13 (1), p.33-33, Article 33

2021

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Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

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Electrical switching properties and structural characteristics of GeSe-GeTe films

Nanoscale, 2019-01, Vol.11 (4), p.1595-1603

2019

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Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

ACS applied materials & interfaces, 2020-05, Vol.12 (20), p.23051-23059

2020

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Observation of van der Waals reconfiguration in superlattice phase change materials

Nanoscale, 2019-09, Vol.11 (36), p.16954-16961

2019

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Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Journal of materials science. Materials in electronics, 2020-04, Vol.31 (8), p.5833-5837

2020

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Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

InfoMat, 2021-09, Vol.3 (9), p.1008-1015

2021

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Direct observation of partial disorder and zipperlike transition in crystalline phase change materials

Physical review materials, 2019-03, Vol.3 (3), Article 033603

2019

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Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Nano futures, 2017-09, Vol.1 (2)

2017

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Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

Acta materialia, 2014-07, Vol.73, p.48-55

2014

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Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thin solid films, 2021-09, Vol.734, p.138837, Article 138837

2021

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Thermal Barrier Phase Change Memory

ACS applied materials & interfaces, 2019-02, Vol.11 (5), p.5336-5343

2019

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12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale, 2021-06, Vol.13 (23), p.1455-1461

2021

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In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface

Ceramics international, 2019-10, Vol.45 (15), p.19542-19546

2019

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Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory

ACS applied materials & interfaces, 2020-04, Vol.12 (14), p.16601-16608

2020

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High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Scripta materialia, 2019-04, Vol.164, p.25-29

2019

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Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

ACS applied materials & interfaces, 2019-03, Vol.11 (11), p.10848-10855

2019

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The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Materials letters, 2019-11, Vol.254, p.182-185

2019

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Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Applied surface science, 2010-03, Vol.256 (11), p.3499-3502

2010

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Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Materials today physics, 2020-12, Vol.15, p.100266, Article 100266

2020

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Study on the phase change behavior of nitrogen doped Bi2Te3 films

Journal of alloys and compounds, 2018-07, Vol.754, p.227-231

2018

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Constructing reliable PCM and OTS devices with an interfacial carbon layer

Journal of materials science. Materials in electronics, 2019-11, Vol.30 (22), p.20037-20042

2019

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Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (38), p.11813-11823

2019

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Enhanced performance of phase change memory by grain size reduction

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-03, Vol.10 (9), p.3585-3592

2022

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Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

Applied physics. A, Materials science & processing, 2016-09, Vol.122 (9), p.1-6, Article 865

2016

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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Electrical switching properties and structural characteristics of GeSe-GeTe films

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Observation of van der Waals reconfiguration in superlattice phase change materials

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Direct observation of partial disorder and zipperlike transition in crystalline phase change materials

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thermal Barrier Phase Change Memory

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface

Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory

High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Study on the phase change behavior of nitrogen doped Bi2Te3 films

Constructing reliable PCM and OTS devices with an interfacial carbon layer

Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching

Enhanced performance of phase change memory by grain size reduction

Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

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