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[2+1] cycloaddition for cross-linking SWCNTs

Carbon (New York), 2004, Vol.42 (5), p.941-947

2004

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Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM

Physica status solidi. C, 2010-02, Vol.7 (2), p.398-401

2010

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The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.395-398

2004

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Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

MRS proceedings, 1990, Vol.192, Article 157

1990

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Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides

Advanced functional materials, 2013-02, Vol.23 (7), p.794-805

2013

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Conduction-band states and surface core excitons in InSb(110) and other III-V compounds

Physical review. B, Condensed matter, 1994-09, Vol.50 (11), p.7384-7388

1994

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Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center

Physical review. B, Condensed matter, 1993-11, Vol.48 (19), p.14301-14308

1993

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Contactless Measurement of the Thermal Conductivity of Thin SiC Layers

Materials science forum, 1998-01, Vol.264-268, p.657-660

1998

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Contactless measurements of the photocarrier lifetime in amorphous silicon by a heterodyne experiment

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.216-219

1998

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Controlled hydroxylation of diamond for covalent attachment of fullerene molecules

Diamond and related materials, 2008-07, Vol.17 (7), p.1362-1366

2008

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Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

Diamond and related materials, 2021-06, Vol.116, p.108377, Article 108377

2021

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Defects and disorder broadened band tails in compensated hydrogenated amorphous silicon

Journal of non-crystalline solids, 1991, Vol.137, p.387-390

1991

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Diamond Surfaces with Air-Stable Negative Electron Affinity and Giant Electron Yield Enhancement

Advanced functional materials, 2013-12, Vol.23 (45), p.5608-5614

2013

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Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC

Materials science forum, 2000-01, Vol.338-342, p.387-390

2000

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Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface

Materials science forum, 1998-01, Vol.264-268, p.331-334

1998

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Electronic Raman Studies of Shallow Donors in Silicon Carbide

Materials science forum, 2006-01, Vol.527-529, p.579-584

2006

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Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy

Journal of non-crystalline solids, 1989-12, Vol.114, p.238-243

Ley, Lothar

1989

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Electronic Structure of Graphite/6H-SiC Interfaces

Materials science forum, 2007-01, Vol.556-557, p.701-704

2007

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Energy level alignment at the porphyrin/cobaltocene interface: From transfer doping to cobalt intercalation

Organic electronics, 2014-02, Vol.15 (2), p.531-536

2014

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Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Materials science forum, 2002-04, Vol.389-393, p.625-628

2002

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Functionalization of single-walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy

Physica Status Solidi (b), 2006-11, Vol.243 (13), p.3213-3216

2006

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g -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

Physical review. B, 2019-01, Vol.99 (3), p.1, Article 035159

2019

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Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

Materials science forum, 2009, Vol.600-603, p.567-570

2009

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Growth of 3C-SiC Bulk Material by the Modified Lely Method

Materials science forum, 2004-01, Vol.457-460, p.151-156

2004

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High-field magnetotransport studies of surface-conducting diamonds

Physical review. B, 2022-06, Vol.105 (24), Article 245307

2022

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[2+1] cycloaddition for cross-linking SWCNTs

Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC

Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides

Conduction-band states and surface core excitons in InSb(110) and other III-V compounds

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center

Contactless Measurement of the Thermal Conductivity of Thin SiC Layers

Contactless measurements of the photocarrier lifetime in amorphous silicon by a heterodyne experiment

Controlled hydroxylation of diamond for covalent attachment of fullerene molecules

Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

Defects and disorder broadened band tails in compensated hydrogenated amorphous silicon

Diamond Surfaces with Air-Stable Negative Electron Affinity and Giant Electron Yield Enhancement

Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC

Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface

Electronic Raman Studies of Shallow Donors in Silicon Carbide

Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy

Electronic Structure of Graphite/6H-SiC Interfaces

Energy level alignment at the porphyrin/cobaltocene interface: From transfer doping to cobalt intercalation

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Functionalization of single-walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy

g -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

Growth of 3C-SiC Bulk Material by the Modified Lely Method

High-field magnetotransport studies of surface-conducting diamonds

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