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Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

Nature materials, 2012-05, Vol.11 (7), p.599-603

2012

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Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

Applied surface science, 2020-02, Vol.504, p.144447, Article 144447

2020

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Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation

Thin solid films, 2020-09, Vol.709, p.138208, Article 138208

2020

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Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Thin solid films, 2018-08, Vol.659, p.1-6

2018

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Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

Thin solid films, 2018-05, Vol.653, p.173-178

2018

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Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

Journal of materials science. Materials in electronics, 2019-12, Vol.30 (23), p.20751-20757

2019

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Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

Thin solid films, 2017-07, Vol.634, p.141-146

2017

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Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices

Thin solid films, 2016-10, Vol.616, p.502-506

2016

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Phase change memory employing a Ti diffusion barrier for reducing reset current

Thin solid films, 2016-08, Vol.612, p.135-140

2016

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Size and Shape Effect of SiC Source/Drain on Strained Si

Journal of nanoscience and nanotechnology, 2014-10, Vol.14 (10), p.7679-7682

2014

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Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

Thin solid films, 2013-11, Vol.546, p.226-230

2013

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Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates

Journal of nanoscience and nanotechnology, 2017-06, Vol.17 (6), p.4235-4238

2017

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Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Thin solid films, 2010-02, Vol.518 (8), p.2065-2069

2010

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The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film

Journal of the Electrochemical Society, 2010, Vol.157 (8), p.G183

2010

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Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

Thin solid films, 2010, Vol.518 (6), p.1682-1688

2010

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Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.929-933

2006

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Annealing effects of aluminum silicate films grown on Si(100)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-05, Vol.20 (3), p.865-872

2002

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A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates

Journal of nanoscience and nanotechnology, 2016-02, Vol.16 (2), p.1798-1801

2016

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Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates

Journal of nanoscience and nanotechnology, 2015-07, Vol.15 (7), p.5264-5266

2015

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SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain

2010 Symposium on VLSI Technology, 2010, p.39-40

2010

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Reinforcement of molten carbonate fuel cell matrixes by adding rod-shaped γ-LiAlO2 particles

Journal of materials science, 2001, Vol.36 (2), p.441-450

2001

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Defect analyses of selective epitaxial grown GaAs on STI patterned (001) Si substrates

Journal of crystal growth, 2014-09, Vol.401, p.319-322

2014

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Epitaxial Y2O3 film growth on an oxidized Si surface

Thin solid films, 2002, Vol.402 (1-2), p.38-42

2002

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Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-01, Vol.19 (1), p.192-199

2001

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Characteristics of Y2O3 films on Si(111) grown by oxygen-ion beam-assisted deposition

Thin solid films, 2001-02, Vol.382 (1-2), p.288-296

2001

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Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation

Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices

Phase change memory employing a Ti diffusion barrier for reducing reset current

Size and Shape Effect of SiC Source/Drain on Strained Si

Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film

Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

Annealing effects of aluminum silicate films grown on Si(100)

A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates

Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates

SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain

Reinforcement of molten carbonate fuel cell matrixes by adding rod-shaped γ-LiAlO2 particles

Defect analyses of selective epitaxial grown GaAs on STI patterned (001) Si substrates

Epitaxial Y2O3 film growth on an oxidized Si surface

Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

Characteristics of Y2O3 films on Si(111) grown by oxygen-ion beam-assisted deposition

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