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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Materials, 2019-05, Vol.12 (11), p.1739

2019

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Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Semiconductor science and technology, 2013-11, Vol.28 (11), p.115010

2013

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Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085012

2011

Volltextzugriff (PDF)

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Materials, 2019-01, Vol.12 (1), p.161

2019

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Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

Current Applied Physics, 2013, 13(1), , pp.246-251

2013

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A numerical study for the optimal arrangement of ocean current turbine generators in the ocean current power parks

Current Applied Physics, 2010, 10(2), , pp.137-141

2010

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Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors

Semiconductor science and technology, 2013-08, Vol.28 (8)

2013

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Bias-stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105014

2013

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Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Thin solid films, 2011-08, Vol.519 (20), p.6910-6915

2011

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Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105018

2013

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Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5637-5640

2008

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Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Applied surface science, 2017-02, Vol.396, p.1472-1477

2017

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Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors

Materials science in semiconductor processing, 2015-09, Vol.37, p.129-134

2015

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Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure

Semiconductor science and technology, 2018-10, Vol.33 (12)

2018

Volltextzugriff (PDF)

Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors

Materials science in semiconductor processing, 2015-10, Vol.38, p.50-56

2015

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Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices

Thin solid films, 2013-03, Vol.531, p.349-353

2013

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Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

Thin solid films, 2010-03, Vol.518 (10), p.2808-2811

2010

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Fabrication of ZnO nanorods for gas sensing applications using hydrothermal method

Journal of nanoscience and nanotechnology, 2014-08, Vol.14 (8), p.6261

2014

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High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel

Semiconductor science and technology, 2015-07, Vol.30 (7), p.75009

2015

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Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology

Materials science in semiconductor processing, 2015-09, Vol.37, p.9-13

2015

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Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Transactions on Electrical and Electronic Materials, 2015, 16(5), , pp.234-240

2015

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Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35014

2013

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Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation Displays

Journal of electronic materials, 2013-04, Vol.42 (4), p.711-715

2013

Volltextzugriff (PDF)

High charge storage of poly-Si thin film nonvolatile memory devices with oxide–silicon–oxynitride stack structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-03, Vol.167 (3), p.167-170

2010

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The effect of firing temperature profiles for the high efficiency of crystalline Si solar cells

Solar energy materials and solar cells, 2010-05, Vol.94 (5), p.823-829

2010

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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

A numerical study for the optimal arrangement of ocean current turbine generators in the ocean current power parks

Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors

Bias-stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors

Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range

Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors

Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure

Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors

Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices

Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

Fabrication of ZnO nanorods for gas sensing applications using hydrothermal method

High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel

Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory

Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation Displays

High charge storage of poly-Si thin film nonvolatile memory devices with oxide–silicon–oxynitride stack structures

The effect of firing temperature profiles for the high efficiency of crystalline Si solar cells

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