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Storing quantum information for 30 seconds in a nanoelectronic device

Nature nanotechnology, 2014-12, Vol.9 (12), p.986-991

2014

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Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Nano letters, 2010-01, Vol.10 (1), p.11-15

2010

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Fabrication of Ultrathin Single-Crystal Diamond Membranes

Advanced materials (Weinheim), 2008-12, Vol.20 (24), p.4793-4798

2008

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Highly 28Si enriched silicon by localised focused ion beam implantation

Communications materials, 2024-05, Vol.5 (1), p.57-7, Article 57

2024

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Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

Physical review. B, 2016-10, Vol.94 (16), p.161302(R), Article 161302

2016

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A dressed spin qubit in silicon

Nature nanotechnology, 2017-01, Vol.12 (1), p.61-66

2017

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Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

Advanced materials (Weinheim), 2022-01, Vol.34 (3), p.e2103235-n/a

2022

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Bell's inequality violation with spins in silicon

Nature nanotechnology, 2016-03, Vol.11 (3), p.242-246

2016

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Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

Advanced materials (Weinheim), 2024-08, Vol.36 (40), p.e2405006-n/a

2024

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Charge State Control and Relaxation in an Atomically Doped Silicon Device

Nano letters, 2007-07, Vol.7 (7), p.2000-2003

2007

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Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond

Advanced functional materials, 2023-12, Vol.33 (51), p.n/a

2023

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Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022)

Advanced materials (Weinheim), 2022-01, Vol.34 (3), p.n/a

2022

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Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Physical review. B, 2019-05, Vol.99 (20), p.205306, Article 205306

2019

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Characterization of silicon polycrystalline solar cells at cryogenic temperatures with ion beam-induced charge

Solar energy materials and solar cells, 2010-12, Vol.94 (12), p.2405-2410

2010

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Lattice location of nickel in diamond by RBS channelling and PIXE

Physica status solidi. A, Applications and materials science, 2011-01, Vol.208 (1), p.42-46

2011

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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Advances in materials science and engineering, 2012-01, Vol.2012 (2012), p.1-10

2012

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Ion-Beam-Assisted Lift-Off Technique for Three-Dimensional Micromachining of Freestanding Single-Crystal Diamond

Advanced materials (Weinheim), 2005-10, Vol.17 (20), p.2427-2430

2005

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Deterministic doping

Materials science in semiconductor processing, 2017-05, Vol.62, p.23-30

2017

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Analysis of Integrated Circuits and Semiconductor Materials Using IBIC Microscopy

MRS bulletin, 2000-02, Vol.25 (2), p.14-20

2000

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Nanoscale fabrication using single-ion impacts

Smart materials and structures, 2002-10, Vol.11 (5), p.686-690

2002

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Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Smart materials and structures, 2002-10, Vol.11 (5), p.735-740

2002

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Electron tunnel rates in a donor-silicon single electron transistor hybrid

Physical review. B, Condensed matter and materials physics, 2010-06, Vol.81 (23), Article 235318

2010

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Manipulation of single magnetic protein particles using atomic force microscopy

Journal of magnetism and magnetic materials, 2004-05, Vol.272-276, p.E1231-E1233

2004

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Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

Journal of computational and theoretical nanoscience, 2005-06, Vol.2 (2), p.214-226

2005

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Focused microprobes of high energy ions — versatile analytical probes for surfaces, interfaces and devices

Applied surface science, 2001-01, Vol.169, p.134-141

2001

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Storing quantum information for 30 seconds in a nanoelectronic device

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Fabrication of Ultrathin Single-Crystal Diamond Membranes

Highly 28Si enriched silicon by localised focused ion beam implantation

Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

A dressed spin qubit in silicon

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

Bell's inequality violation with spins in silicon

Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

Charge State Control and Relaxation in an Atomically Doped Silicon Device

Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Characterization of silicon polycrystalline solar cells at cryogenic temperatures with ion beam-induced charge

Lattice location of nickel in diamond by RBS channelling and PIXE

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Ion-Beam-Assisted Lift-Off Technique for Three-Dimensional Micromachining of Freestanding Single-Crystal Diamond

Deterministic doping

Analysis of Integrated Circuits and Semiconductor Materials Using IBIC Microscopy

Nanoscale fabrication using single-ion impacts

Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Manipulation of single magnetic protein particles using atomic force microscopy

Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

Focused microprobes of high energy ions — versatile analytical probes for surfaces, interfaces and devices

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