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Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Nature materials, 2024-07, Vol.23 (7), p.920-927

2024

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Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

Nano letters, 2009-02, Vol.9 (2), p.707-710

2009

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Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

Physical review. B, Condensed matter and materials physics, 2009-09, Vol.80 (11), Article 115332

2009

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Spin-injection spectra of CoFe/GaAs contacts: Dependence on Fe concentration, interface, and annealing conditions

Physical review. B, Condensed matter and materials physics, 2011-07, Vol.84 (4), Article 041307

2011

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Tunable effective g factor in InAs nanowire quantum dots

Physical review. B, Condensed matter and materials physics, 2005-11, Vol.72 (20), p.201307.1-201307.4, Article 201307

2005

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Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

Physical review. B, Condensed matter and materials physics, 2010-05, Vol.81 (20), Article 205323

2010

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Single-electron effects in a coupled dot-ring system

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (24), Article 241302

2004

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Tunable Double Quantum Dots in InAs Nanowires Defined by Local Gate Electrodes

Nano letters, 2005-07, Vol.5 (7), p.1487-1490

2005

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Fano effect in a quantum-ring–quantum-dot system with tunable coupling

Physical review. B, Condensed matter and materials physics, 2006-05, Vol.73 (20), Article 205326

2006

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Transport properties of quantum dots with steep walls

Physical review. B, Condensed matter, 2001-03, Vol.63 (12), Article 125309

2001

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Electronic properties of AFM-defined semiconductor nanostructures

Materials Science & Engineering C, 2001, Vol.15 (1), p.153-157

2001

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Measurement of mobility in dual-gated MoS₂ transistors

Nature nanotechnology, 2013-03, Vol.8 (3), p.146-147

2013

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Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers

Nano letters, 2015-04, Vol.15 (4), p.2526-2532

2015

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Creating a Stable Oxide at the Surface of Black Phosphorus

ACS applied materials & interfaces, 2015-07, Vol.7 (27), p.14557-14562

2015

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Intrinsic and extrinsic performance limits of graphene devices on SiO2

Nature nanotechnology, 2008-04, Vol.3 (4), p.206-209

2008

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Layer Number and Stacking Sequence Imaging of Few-Layer Graphene by Transmission Electron Microscopy

Nano letters, 2012-09, Vol.12 (9), p.4635-4641

2012

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Overcoming Boltzmann’s Tyranny in a Transistor via the Topological Quantum Field Effect

Nano letters, 2021-04, Vol.21 (7), p.3155-3161

2021

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Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

Nano letters, 2015-03, Vol.15 (3), p.2067-2073

2015

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Advanced materials (Weinheim), 2021-08, Vol.33 (33), p.e2007795-n/a

2021

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Graphene: Materially Better Carbon

MRS bulletin, 2010-04, Vol.35 (4), p.289-295

2010

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Extraordinary Mobility in Semiconducting Carbon Nanotubes

Nano letters, 2004-01, Vol.4 (1), p.35-39

2004

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Anisotropic Etching of Atomically Thin MoS2

Journal of physical chemistry. C, 2013-12, Vol.117 (48), p.25643-25649

2013

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Single-walled carbon nanotube electronics

IEEE transactions on nanotechnology, 2002-03, Vol.1 (1), p.78-85

2002

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Atomic Structure of Graphene on SiO2

Nano letters, 2007-06, Vol.7 (6), p.1643-1648

2007

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Hybridized Hyperbolic Surface Phonon Polaritons at α‑MoO3 and Polar Dielectric Interfaces

Nano letters, 2021-04, Vol.21 (7), p.3112-3119

2021

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Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

Spin-injection spectra of CoFe/GaAs contacts: Dependence on Fe concentration, interface, and annealing conditions

Tunable effective g factor in InAs nanowire quantum dots

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

Single-electron effects in a coupled dot-ring system

Tunable Double Quantum Dots in InAs Nanowires Defined by Local Gate Electrodes

Fano effect in a quantum-ring–quantum-dot system with tunable coupling

Transport properties of quantum dots with steep walls

Electronic properties of AFM-defined semiconductor nanostructures

Measurement of mobility in dual-gated MoS₂ transistors

Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers

Creating a Stable Oxide at the Surface of Black Phosphorus

Intrinsic and extrinsic performance limits of graphene devices on SiO2

Layer Number and Stacking Sequence Imaging of Few-Layer Graphene by Transmission Electron Microscopy

Overcoming Boltzmann’s Tyranny in a Transistor via the Topological Quantum Field Effect

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Graphene: Materially Better Carbon

Extraordinary Mobility in Semiconducting Carbon Nanotubes

Anisotropic Etching of Atomically Thin MoS2

Single-walled carbon nanotube electronics

Atomic Structure of Graphene on SiO2

Hybridized Hyperbolic Surface Phonon Polaritons at α‑MoO3 and Polar Dielectric Interfaces

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