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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6), p.65303-1-6

2013

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Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Journal of alloys and compounds, 2014-03, Vol.590, p.1-4

2014

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MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer

Journal of crystal growth, 2005-11, Vol.284 (3), p.459-463

2005

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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Journal of electronic materials, 2009-09, Vol.38 (9), p.1938-1943

2009

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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of alloys and compounds, 2013-03, Vol.554, p.104-109

2013

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The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2012-03, Vol.41 (3), p.466-470

2012

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High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Journal of alloys and compounds, 2011-02, Vol.509 (5), p.2227-2231

2011

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Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering

Journal of alloys and compounds, 2010-01, Vol.489 (2), p.519-522

2010

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Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

Journal of electronic materials, 2011-04, Vol.40 (4), p.446-452

2011

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Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector

Plasmonics (Norwell, Mass.), 2016-06, Vol.11 (3), p.833-838

2016

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Effects of the AIN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of alloys and compounds, 2013, Vol.554, p.104-109

2013

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The Effect of AIN Nucleation Temperature on the Growth of AIN Films via Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2012, Vol.41 (3), p.466-470

2012

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Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

Journal of crystal growth, 2006-05, Vol.290 (2), p.426-430

2006

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Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition: Group III Nitrides, SiC and ZnO

Journal of electronic materials, 2011, Vol.40 (4), p.446-452

2011

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Effect of high-temperature annealing on the structural and optical properties of ZnO films

Thin solid films, 2005-11, Vol.491 (1), p.323-327

2005

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Atmospheric pressure MOCVD growth of high-quality ZnO films on GaN/Al2O3 templates

Journal of crystal growth, 2005-09, Vol.283 (1-2), p.93-99

2005

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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AIN Buffer Layers

Journal of electronic materials, 2009, Vol.38 (9), p.1938-1943

2009

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Structural and luminescent properties of ZnO epitaxial film grown on Si(1 1 1) substrate by atmospheric-pressure MOCVD

Journal of crystal growth, 2005-03, Vol.275 (3), p.486-491

2005

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High-quality ZnO films grown by atmospheric pressure metal– organic chemical vapor deposition

Journal of crystal growth, 2005-09, Vol.283 (1-2), p.87-92

2005

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Comparisons of structural and optical properties of ZnO films grown on (0 0 0 1) sapphire and GaN/(0 0 0 1) sapphire template by atmospheric-pressure MOCVD

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-02, Vol.127 (2), p.280-284

2006

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Fe3O4/ZnO/Si3N4 nanocomposite based photocatalyst for the degradation of dyes from aqueous solution

Materials letters, 2020-11, Vol.278, p.128359, Article 128359

2020

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Effects of laser peening on stress corrosion cracking (SCC) of ANSI 304 austenitic stainless steel

Corrosion science, 2012-07, Vol.60, p.145-152

2012

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The tensile behaviors and fracture characteristics of stainless steel clad plates with different interfacial status

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2017-01, Vol.679, p.172-182

2017

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Edge and Surface Plasmons in Graphene Nanoribbons

Nano letters, 2015-12, Vol.15 (12), p.8271-8276

2015

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Ultralow-loss polaritons in isotopically pure boron nitride

Nature materials, 2018-02, Vol.17 (2), p.134-139

2018

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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering

Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector

Effects of the AIN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

The Effect of AIN Nucleation Temperature on the Growth of AIN Films via Metalorganic Chemical Vapor Deposition

Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition: Group III Nitrides, SiC and ZnO

Effect of high-temperature annealing on the structural and optical properties of ZnO films

Atmospheric pressure MOCVD growth of high-quality ZnO films on GaN/Al2O3 templates

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AIN Buffer Layers

Structural and luminescent properties of ZnO epitaxial film grown on Si(1 1 1) substrate by atmospheric-pressure MOCVD

High-quality ZnO films grown by atmospheric pressure metal– organic chemical vapor deposition

Comparisons of structural and optical properties of ZnO films grown on (0 0 0 1) sapphire and GaN/(0 0 0 1) sapphire template by atmospheric-pressure MOCVD

Fe3O4/ZnO/Si3N4 nanocomposite based photocatalyst for the degradation of dyes from aqueous solution

Effects of laser peening on stress corrosion cracking (SCC) of ANSI 304 austenitic stainless steel

The tensile behaviors and fracture characteristics of stainless steel clad plates with different interfacial status

Edge and Surface Plasmons in Graphene Nanoribbons

Ultralow-loss polaritons in isotopically pure boron nitride

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