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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Journal of crystal growth, 1994-10, Vol.143 (3), p.115-123

1994

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Accomodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Journal of crystal growth, 1994, Vol.143 (3-4), p.115-123

1994

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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

MRS proceedings, 1995, Vol.378, p.863-868, Article 863

1995

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CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-11, Vol.12 (6), p.3018-3022

1994

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Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

Journal of alloys and compounds, 2013-03, Vol.552, p.88-97

2013

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Direct Wafer Bonding of Preamorphized Silicon Wafers

MRS proceedings, 1995, Vol.378, p.869-874, Article 869

1995

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Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

Thin solid films, 1998-12, Vol.336 (1), p.277-280

1998

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Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes

Journal de physique. III (Les Ulis), 1993-09, Vol.3 (9), p.1803-1808

1993

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Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Philosophical magazine (London, England : 1945), 1976-02, Vol.33 (2), p.293-303

1976

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Evidence by spectroscopic ellipsometry of optical property change in pulsed laser deposited NiO films when heated in air at Neel temperature

Applied physics. A, Materials science & processing, 2004-09, Vol.79 (4-6), p.1439-1443

2004

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The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

Metallurgical transactions. A, Physical metallurgy and materials science, 1991-09, Vol.22 (9), p.2133-2139

1991

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Microtwinning and growth defects in GaAs MBE layers

Journal of crystal growth, 1982-10, Vol.59 (3), p.531-538

1982

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MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs

MRS proceedings, 1989, Vol.148

1989

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A new casting process for carbon (or SiC-based) fibre-aluminium matrix low-cost composite materials

Journal of materials science letters, 1985-12, Vol.4 (12), p.1527-1529

1985

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Nucleation and growth of gallium arsenide on silicon

Applied surface science, 1992, Vol.56, p.589-596

1992

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Quantitative analysis of strain field in thin films from HRTEM micrographs

Thin solid films, 1998-04, Vol.319 (1), p.157-162

1998

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Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states

Physical review. B, Condensed matter and materials physics, 2003, Vol.67

2003

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Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Physical review. B, Condensed matter, 2003-05, Vol.67 (20), Article 205325

2003

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Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.88 (2), p.181-185

2002

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Silicium polycristallin

Revue de physique appliquée, 1987, Vol.22 (7), p.511-511

1987

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Structural and electrical investigations of silicon wafer bonding interfaces

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.164-167

1996

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Structural characterization of AlGaAs/GaAs multiquantum-well structures grown on silicon

Thin solid films, 1990, Vol.184 (1), p.429-436

1990

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Surprising effect of nanoparticle inclusion on ion conductivity in a lithium doped organic ionic plastic crystal

Journal of materials chemistry, 2009-03, Vol.19 (11), p.1635-1642

2009

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TEM evaluation of strain and stress in III-V semiconductor epitaxial structures

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.357-363

2004

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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Accomodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

Direct Wafer Bonding of Preamorphized Silicon Wafers

Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes

Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Evidence by spectroscopic ellipsometry of optical property change in pulsed laser deposited NiO films when heated in air at Neel temperature

The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

Microtwinning and growth defects in GaAs MBE layers

MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs

A new casting process for carbon (or SiC-based) fibre-aluminium matrix low-cost composite materials

Nucleation and growth of gallium arsenide on silicon

Quantitative analysis of strain field in thin films from HRTEM micrographs

Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states

Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)

Silicium polycristallin

Structural and electrical investigations of silicon wafer bonding interfaces

Structural characterization of AlGaAs/GaAs multiquantum-well structures grown on silicon

Surprising effect of nanoparticle inclusion on ion conductivity in a lithium doped organic ionic plastic crystal

TEM evaluation of strain and stress in III-V semiconductor epitaxial structures

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