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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Thin solid films, 2012-05, Vol.520 (14), p.4576-4579

2012

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Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Thin solid films, 2003-08, Vol.437 (1-2), p.248-256

2003

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First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Materials science in semiconductor processing, 2004-01, Vol.7 (4-6), p.227-230

2004

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Optical properties and band gap characterization of high dielectric constant oxides

Thin solid films, 2012-05, Vol.520 (14), p.4532-4535

2012

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin solid films, 2010-05, Vol.518 (15), p.4380-4384

2010

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The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin solid films, 2009-10, Vol.517 (23), p.6334-6336

2009

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CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Thin solid films, 2012-05, Vol.520 (14), p.4518-4522

2012

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin solid films, 2013-06, Vol.536, p.68-73

2013

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Textured strontium titanate layers on platinum by atomic layer deposition

Thin solid films, 2012-08, Vol.520 (21), p.6535-6540

2012

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Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

Thin solid films, 2011-03, Vol.519 (11), p.3831-3834

2011

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Basic investigation of HfO2 based metal–insulator–metal diodes

Thin solid films, 2011-06, Vol.519 (17), p.5796-5799

2011

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Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

Thin solid films, 2011-06, Vol.519 (17), p.5734-5739

2011

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Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

ECS journal of solid state science and technology, 2012-01, Vol.1 (1), p.N1-N5

2012

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Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

Thin solid films, 2011-06, Vol.519 (17), p.5730-5733

2011

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Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes

IOP conference series. Materials Science and Engineering, 2012, Vol.41 (1)

2012

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Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure

IOP conference series. Materials Science and Engineering, 2012, Vol.41 (1)

2012

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Alternative High-k Dielectrics for Metal-Insulator-Metal Applications

ECS transactions, 2010, Vol.33 (3), p.15-23

2010

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The effect of composition on the bandgap width in insulating NbxTayOz nanolayers

IOP conference series. Materials Science and Engineering, 2012, Vol.41 (1)

2012

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Gigahertz monolithic delay lines for surface acoustic waves on Silicon

IOP conference series. Materials Science and Engineering, 2012-01, Vol.41 (1), p.12009-6

2012

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Injection and trapping of electrons in Y2O3 layers on Si

IOP conference series. Materials Science and Engineering, 2010-01, Vol.8 (1), p.012028-012028

2010

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Ab initio study of point defects in dielectrics based on Pr oxides

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.897-903, Article 897

2006

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Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures

Materials science in semiconductor processing, 2002-04, Vol.5 (2-3), p.233-236

2002

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Magnetic penetration depth and condensate density of cuprate high- T c superconductors determined by muon-spin-rotation experiments

Physical review. B, Condensed matter, 1995-10, Vol.52 (14), p.10488-10498

1995

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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Optical properties and band gap characterization of high dielectric constant oxides

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

CexAlyOz/TiN stack analysis for Metal–Insulator–Metal applications: Effect of annealing and the metal electrode deposition method

Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Textured strontium titanate layers on platinum by atomic layer deposition

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

Basic investigation of HfO2 based metal–insulator–metal diodes

Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes

Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure

Alternative High-k Dielectrics for Metal-Insulator-Metal Applications

The effect of composition on the bandgap width in insulating NbxTayOz nanolayers

Gigahertz monolithic delay lines for surface acoustic waves on Silicon

Injection and trapping of electrons in Y2O3 layers on Si

Ab initio study of point defects in dielectrics based on Pr oxides

Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures

Magnetic penetration depth and condensate density of cuprate high- T c superconductors determined by muon-spin-rotation experiments

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