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Durability and Reliability of Semiconductor Devices

MRS proceedings, 1998, Vol.531, Article 371

1998

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Gallium Nitride Doped with Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes

MRS proceedings, 1997, Vol.468, Article 137

1997

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Electrochemical Etching in the GaN-Based Technology

MRS proceedings, 1998, Vol.512, Article 513

1998

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Reabsorption of recombination radiation in semiconductors with high internal quantum efficiency

Physica status solidi. A, Applied research, 1986-05, Vol.95 (1), p.15-40

1986

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Anomalous Positron Lifetime in Single Crystal of Weyl Semimetal CoSi

Crystals (Basel), 2023-03, Vol.13 (3), p.509

2023

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Long – Time relaxation in liquid eutectics

Journal of alloys and compounds, 2019-05, Vol.785, p.1279-1283

2019

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Hyperfine field studies of the high-pressure phase of noncentrosymmetric superconductor RhGe (B20) doped with hafnium

Journal of alloys and compounds, 2021-01, Vol.850, p.156601, Article 156601

2021

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Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films

Materials research express, 2020-12, Vol.7 (12), p.125903

2020

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Transformations in phenylboronic acid at high pressures and temperatures

Diamond and related materials, 2024-08, Vol.147, p.111328, Article 111328

2024

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The new high-pressure hexagonal Laves phase of the YbZn2 compound

Journal of alloys and compounds, 2023-06, Vol.946, p.169275, Article 169275

2023

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Gold and silver: Noble solvents for the synthesis of superconducting boron-doped diamonds

Diamond and related materials, 2024-02, Vol.142, p.110784, Article 110784

2024

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Split of the magnetic and crystallographic states in Fe1−xRhxGe

Journal of alloys and compounds, Article 167943

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Magnetic Nanoparticle Support with an Ultra-Thin Chitosan Layer Preserves the Catalytic Activity of the Immobilized Glucose Oxidase

Nanomaterials (Basel, Switzerland), 2024-04, Vol.14 (8), p.700

2024

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The Use of Carbon-Containing Compounds to Prepare Functional and Structural Composite Materials: A Review

Applied sciences, 2022-10, Vol.12 (19), p.9945

2022

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Synthesis of Superconducting Boron-Doped Diamond in Carbon and Boron Solutions in Molten Gold and Copper

Inorganic materials, 2023-09, Vol.59 (9), p.919-925

2023

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Augmentation of Aluminum and Boron Ignition

Combustion, explosion, and shock waves, 2021-03, Vol.57 (2), p.190-195

2021

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Arsenic and phosphorus in feldspar framework: sanidine–filatovite solid solution series from fumarolic exhalations of the Tolbachik volcano, Kamchatka, Russia

Physics and chemistry of minerals, 2020, Vol.47 (1), Article 1

2020

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Journal of electronic materials, 2020-05, Vol.49 (5), p.3202-3208

2020

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Journal of electronic materials, 2021-04, Vol.50 (4), p.2323-2330

2021

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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2021-08, Vol.50 (8), p.4599-4605

2021

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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Semiconductor science and technology, 2020-05, Vol.35 (5), p.55026

2020

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Natural forsterite strongly enriched by arsenic and phosphorus: chemistry, crystal structure, crystal morphology and zonation

Physics and chemistry of minerals, 2019-10, Vol.46 (9), p.889-898

2019

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Larger pores dramatically enhance activity of an immobilized enzyme in mesoporous magnetic silica

Microporous and mesoporous materials, 2022-08, Vol.341, p.112092, Article 112092

2022

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Vacuum, 2018-12, Vol.158, p.136-140

2018

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Mono- and Bimetallic Nanoparticles Stabilized by an Aromatic Polymeric Network for a Suzuki Cross-Coupling Reaction

Nanomaterials (Basel, Switzerland), 2021-12, Vol.12 (1), p.94

2021

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Durability and Reliability of Semiconductor Devices

Gallium Nitride Doped with Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes

Electrochemical Etching in the GaN-Based Technology

Reabsorption of recombination radiation in semiconductors with high internal quantum efficiency

Anomalous Positron Lifetime in Single Crystal of Weyl Semimetal CoSi

Long – Time relaxation in liquid eutectics

Hyperfine field studies of the high-pressure phase of noncentrosymmetric superconductor RhGe (B20) doped with hafnium

Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films

Transformations in phenylboronic acid at high pressures and temperatures

The new high-pressure hexagonal Laves phase of the YbZn2 compound

Gold and silver: Noble solvents for the synthesis of superconducting boron-doped diamonds

Split of the magnetic and crystallographic states in Fe1−xRhxGe

Magnetic Nanoparticle Support with an Ultra-Thin Chitosan Layer Preserves the Catalytic Activity of the Immobilized Glucose Oxidase

The Use of Carbon-Containing Compounds to Prepare Functional and Structural Composite Materials: A Review

Synthesis of Superconducting Boron-Doped Diamond in Carbon and Boron Solutions in Molten Gold and Copper

Augmentation of Aluminum and Boron Ignition

Arsenic and phosphorus in feldspar framework: sanidine–filatovite solid solution series from fumarolic exhalations of the Tolbachik volcano, Kamchatka, Russia

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Natural forsterite strongly enriched by arsenic and phosphorus: chemistry, crystal structure, crystal morphology and zonation

Larger pores dramatically enhance activity of an immobilized enzyme in mesoporous magnetic silica

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Mono- and Bimetallic Nanoparticles Stabilized by an Aromatic Polymeric Network for a Suzuki Cross-Coupling Reaction

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