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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3515-3518

2017

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Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4048-4056

2013

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All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.31-41

2020

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Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

IEEE journal of emerging and selected topics in power electronics, 2020-12, Vol.8 (4), p.4270-4278

2020

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Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.58-65

2017

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Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1027-1033

2016

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Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3567-3574

2015

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Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.353-360

2017

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Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.788-794

2015

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

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Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2778-2785

2007

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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

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Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

IEEE transactions on electron devices, 2013-04, Vol.60 (4), p.1310-1317

2013

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Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.720-729

2016

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Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1640-1648

2013

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Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.734-741

2014

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Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.271-274

2019

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GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2647-2655

2014

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The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2770-2777

2009

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Work Function Engineering Within a Single Metal Gate Stack: Manipulating Terbium- and Aluminum-Induced Interface Dipoles of Opposing Polarity

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.466-473

2009

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Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1458-1465

2009

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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2135-2141

2013

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Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1277-1283

2009

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Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2703-2711

2013

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High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

IEEE electron device letters, 2012-10, Vol.33 (10), p.1336-1338

2012

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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters

Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

Work Function Engineering Within a Single Metal Gate Stack: Manipulating Terbium- and Aluminum-Induced Interface Dipoles of Opposing Polarity

Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

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