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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4331-4338

2016

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An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances

IEEE access, 2024, Vol.12, p.69009-69014

2024

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Design and Fabrication of a Monolithic Optoelectronic Integrated Si CMOS LED Based on Hot-Carrier Effect

IEEE journal of selected topics in quantum electronics, 2016-11, Vol.22 (6), p.70-77

2016

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Understanding Electrical Parameter Degradations of P-GaN HEMT Under Repetitive Short-Circuit Stresses

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12173-12176

2021

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Single-Pulse Avalanche Failure Investigations of Si-SJ-mosfet and SiC-mosfet by Step-Control Infrared Thermography Method

IEEE transactions on power electronics, 2020-05, Vol.35 (5), p.5180-5189

2020

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Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2748-2757

2019

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Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5593-5599

2020

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Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.1-4

2020

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Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4535-4542

2024

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High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4462-4466

2021

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Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices

IEEE transactions on industrial electronics (1982), 2022-05, Vol.69 (5), p.5041-5049

2022

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Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5440-5447, Article 5440

2018

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Hot-Carrier-Induced Degradations Investigations for 600 V SOI-LIGBT by an Improved Charge Pumping Solution

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.634-637

2017

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Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3275-3281

2017

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Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8990-9005

2023

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Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT

IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11328-11331

2020

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Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1191-1195

2022

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Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3762-3767

2017

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Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4547-4553

2023

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Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains

IEEE transactions on power electronics, 2022-01, Vol.37 (1), p.55-58

2022

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Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11299-11303

2020

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Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4719-4723

2018

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Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.381-392

2024

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An Isolation Structure Applying Potential Control Technique for 1200 V HVICs

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.927-930

2024

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Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

IEEE transactions on power electronics, 2022-10, Vol.37 (10), p.11507-11510

2022

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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances

Design and Fabrication of a Monolithic Optoelectronic Integrated Si CMOS LED Based on Hot-Carrier Effect

Understanding Electrical Parameter Degradations of P-GaN HEMT Under Repetitive Short-Circuit Stresses

Single-Pulse Avalanche Failure Investigations of Si-SJ-mosfet and SiC-mosfet by Step-Control Infrared Thermography Method

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method

Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses

High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure

Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Hot-Carrier-Induced Degradations Investigations for 600 V SOI-LIGBT by an Improved Charge Pumping Solution

Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT

Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains

Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications

Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

An Isolation Structure Applying Potential Control Technique for 1200 V HVICs

Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

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