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Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures
IEEE journal of the Electron Devices Society, 2021, Vol.9, p.492-499
2021
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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs
IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1
2023
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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors
IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3037-3041
2022
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Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2536-2543, Article 2536
2020
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Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing
IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.3070-3073
2021
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Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias
IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4736-4740
2020
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Variability Modeling in Triple-Gate Junctionless Nanowire Transistors
IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4730-4736
2022
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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures
IEEE journal of the Electron Devices Society, 2024-06, p.1-1
2024
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A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs
IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2485-2491
2017
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Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs
IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.424-429
2020
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On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks
IEEE transactions on nanotechnology, 2021, Vol.20, p.234-242
2021
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Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors
IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.66-72
2017
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Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors
IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.856-863
2016
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Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.223-226
2021
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Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects
IEEE electron device letters, 2013-08, Vol.34 (8), p.957-959
2013
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SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors
IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.352-358
2019
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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5151-5156
2018
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A New Method for Series Resistance Extraction of Nanometer MOSFETs
IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2797-2803
2017
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Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs
IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5481-5486
2018
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Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors
IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.953-956
2014
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Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations
IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1410-1417
2019
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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors
IEEE electron device letters, 2018-09, Vol.39 (9), p.1282-1285
2018
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Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length
IEEE electron device letters, 2013-09, Vol.34 (9), p.1103-1105
2013
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Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4
2019
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A new method for junctionless transistors parameters extraction
2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.66-69
2017
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