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Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Journal of applied physics, 2015-10, Vol.118 (14)

2015

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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

Technical physics letters, 2018-04, Vol.44 (4), p.297-300

2018

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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1439-1442

2016

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Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1469-1474

2016

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Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1511-1514

2016

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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573

2016

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Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1556-1561

2013

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Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

Journal of applied physics, 2011-06, Vol.109 (11), p.113533-113533-7

2011

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Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.19-22

2015

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Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1405-1409

2015

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Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11)

2015

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Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1481-1484

2013

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The modification of the structure of multilayer Co/Pt films by the irradiation with a focused helium ion beam

AIP Conference Proceedings, 2016, Vol.1748 (1)

2016

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Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.14

Khrykin, O. I.

2005

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Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1104-1110

2015

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Epitaxially Grown Monoisotopic Si, Ge, and Si{sub 1–x}Ge{sub x} Alloy Layers: Production and Some Properties

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3)

2016

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Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.433-436

2013

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The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Semiconductors (Woodbury, N.Y.), 2008-01, Vol.42 (1), p.99-103

2008

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Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride

Semiconductors (Woodbury, N.Y.), 2009-07, Vol.43 (7), p.968-972

2009

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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2011-01, Vol.45 (1), p.130-133

2011

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Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

2008

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Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

2008

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The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Semiconductors (Woodbury, N.Y.), 2008-01, Vol.42 (1)

2008

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Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 {mu}m

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4)

2006

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Photoconductivity of structures based on the SnO{sub 2} porous matrix coupled with core-shell CdSe/CdS quantum dots

Applied physics letters, 2013-09, Vol.103 (13)

2013

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Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

The modification of the structure of multilayer Co/Pt films by the irradiation with a focused helium ion beam

Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Epitaxially Grown Monoisotopic Si, Ge, and Si{sub 1–x}Ge{sub x} Alloy Layers: Production and Some Properties

Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride

Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

Photoluminescence up to 1.6 {mu}m of quantum dots with an increased effective thickness of the InAs layer

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 {mu}m

Photoconductivity of structures based on the SnO{sub 2} porous matrix coupled with core-shell CdSe/CdS quantum dots

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