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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

IEEE electron device letters, 2006-05, Vol.27 (5), p.412-415

Ang, D.S.

2006

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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

IEEE electron device letters, 2006-11, Vol.27 (11), p.914-916

2006

Volltextzugriff (PDF)

Ultrafast Measurement on NBTI

IEEE electron device letters, 2009-03, Vol.30 (3), p.275-277

2009

Volltextzugriff (PDF)

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908

2005

Volltextzugriff (PDF)

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758

2006

Volltextzugriff (PDF)

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.751-753

2009

Volltextzugriff (PDF)

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

IEEE electron device letters, 2004-09, Vol.25 (9), p.637-639

2004

Volltextzugriff (PDF)

Role of Nitrogen on the Gate Length Dependence of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.772-774

2009

Volltextzugriff (PDF)

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471

2003

Volltextzugriff (PDF)

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

IEEE electron device letters, 2001-11, Vol.22 (11), p.553-555

Ang, D.S.

2001

Volltextzugriff (PDF)

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600

2003

Volltextzugriff (PDF)

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

IEEE electron device letters, 2004-06, Vol.25 (6), p.417-419

2004

Volltextzugriff (PDF)

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.650-652

2000

Volltextzugriff (PDF)

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746

1999

Volltextzugriff (PDF)

Evolution of oxide charge trapping under bias temperature stressing

Microelectronics and reliability, 2014-04, Vol.54 (4), p.663-681

2014

Volltextzugriff (PDF)

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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

Ultrafast Measurement on NBTI

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

Role of Nitrogen on the Gate Length Dependence of NBTI

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

Evolution of oxide charge trapping under bias temperature stressing

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