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High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Interband tunneling for hole injection in III-nitride ultraviolet emitters

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Layer-transferred MoS2/GaN PN diodes

Applied physics letters, 2015-09, Vol.107 (10)

2015

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InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Polarization-engineered GaN/InGaN/GaN tunnel diodes

Applied physics letters, 2010-11, Vol.97 (20), p.203502-203502-3

2010

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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Applied physics letters, 2011-09, Vol.99 (13), p.133503-133503-3

2011

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Demonstration of forward inter-band tunneling in GaN by polarization engineering

Applied physics letters, 2011-12, Vol.99 (23), p.233504-233504-3

2011

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Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Applied physics letters, 2013-02, Vol.102 (7)

2013

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Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy

Applied physics letters, 2017-11, Vol.111 (20)

2017

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Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2013-11, Vol.103 (22), p.223507

2013

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Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4842-4848

2020

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GdN Nanoisland-Based GaN Tunnel Junctions

Nano letters, 2013-06, Vol.13 (6), p.2570-2575

2013

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Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Applied physics letters, 2012-02, Vol.100 (6), p.063507-063507-3

2012

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Molecular beam epitaxy of 2D-layered gallium selenide on GaNsubstrates

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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Layer-transferred MoS{sub 2}/GaN PN diodes

Applied physics letters, 2015-09, Vol.107 (10)

2015

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Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications

Smart materials and structures, 2012-09, Vol.21 (9), p.94003-1-14

2012

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Power switching transistors based on GaN and AlGaN channels

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015, p.16-20

2015

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Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors

2015 73rd Annual Device Research Conference (DRC), 2015, p.53-54

2015

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Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs

2015 73rd Annual Device Research Conference (DRC), 2015, p.33-34

2015

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High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Layer-transferred MoS2/GaN PN diodes

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Demonstration of forward inter-band tunneling in GaN by polarization engineering

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy

Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

GdN Nanoisland-Based GaN Tunnel Junctions

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Molecular beam epitaxy of 2D-layered gallium selenide on GaNsubstrates

Layer-transferred MoS{sub 2}/GaN PN diodes

Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications

Power switching transistors based on GaN and AlGaN channels

Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors

Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs

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