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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Journal of crystal growth, 2020-02, Vol.532, p.125395, Article 125395

2020

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG02-01AG02-5

2013

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Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure

Journal of crystal growth, 2019-01, Vol.505, p.59-61

2019

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Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NH01-11NH01-5

2013

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Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN28-08JN28-5

2013

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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Chinese physics B, 2016-03, Vol.25 (3), p.38503-38505

2016

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Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Applied surface science, 2015-10, Vol.351, p.1155-1160

2015

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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Chinese physics B, 2016-08, Vol.25 (8), p.357-360

张家琦王磊李柳暗王青鹏江滢朱慧超敖金平

2016

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Monolayer W sub(x)Mo sub(1-x)S sub(2) Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.np-np

2017

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Monolayer W sub(x)Mo sub(1-x)S sub(2) Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

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