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Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

Nano letters, 2011-09, Vol.11 (9), p.3774-3778

2011

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Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

Nano letters, 2012-04, Vol.12 (4), p.1765-1771

2012

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Charge Writing at the LaAlO3/SrTiO3 Surface

Nano letters, 2010-07, Vol.10 (7), p.2588-2591

2010

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Atomically Engineered Metal–Insulator Transition at the TiO2/LaAlO3 Heterointerface

Nano letters, 2014-11, Vol.14 (11), p.6743-6746

2014

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Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

Organic electronics, 2013-07, Vol.14 (7), p.1805-1810

2013

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A Molecular Dynamics Study of Bidirectional Phase Transformation between bcc and fcc Iron

ISIJ International, 2011, Vol.51(10), pp.1710-1716

2011

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Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

Thin solid films, 2012-02, Vol.520 (8), p.3300-3303

2012

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Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays

Journal of electronic materials, 2012-05, Vol.41 (5), p.853-856

2012

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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on ( n 1 1 ) A GaAs substrates

Journal of crystal growth, 2007-04, Vol.301, p.172-176

2007

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Design of electron correlation effects in interfaces and nanostructures

Applied surface science, 2004-10, Vol.237 (1-4), p.2-12

Aoki, Hideo

2004

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Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe(0001) films on Si(111), Si(110) and Si(100)

Thin solid films, 2000-12, Vol.380 (1), p.276-281

2000

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A model for the performance analysis and design of waveguide p-i-n photodetectors

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.465-472

2005

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Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Applied surface science, 2003-06, Vol.216 (1), p.564-568

2003

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Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(1 0 0) substrates

Applied surface science, 2003-06, Vol.216 (1), p.607-613

2003

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Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

Applied surface science, 2002-05, Vol.190 (1), p.508-512

2002

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ZnO and related materials: plasma-assisted molecular beam epitaxial growth, characterization, and application

Journal of electronic materials, 2001-06, Vol.30 (6), p.647-658

2001

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Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Japanese journal of applied physics, 1995-06, Vol.34 (6A), p.L688-L690

1995

Volltextzugriff (PDF)

Magnetoluminescence measurements of two-dimensional hole gas

Thin solid films, 1998-12, Vol.336 (1), p.366-369

1998

Volltextzugriff (PDF)

Evaluation of SiC as a substrate material for nitride materials heteroepitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.53-55

2001

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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Applied surface science, 2002-05, Vol.190 (1), p.288-293

2002

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Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE

Journal of crystal growth, 2000-02, Vol.209 (2), p.242-246

2000

Volltextzugriff (PDF)

Extremely flat interfaces in GaAs/AlGaAs quantum wells grown on GaAs (411)A substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12A), p.L1728-L1731

1993

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Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

Journal of crystal growth, 1998-03, Vol.186 (1), p.48-54

1998

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Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

Thin solid films, 1998-12, Vol.334 (1-2), p.11-14

1998

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High-pressure study of deep emission band at GaAs/partially ordered GaInP interface

Journal of luminescence, 2000-05, Vol.87, p.408-410

2000

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Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

Charge Writing at the LaAlO3/SrTiO3 Surface

Atomically Engineered Metal–Insulator Transition at the TiO2/LaAlO3 Heterointerface

Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

A Molecular Dynamics Study of Bidirectional Phase Transformation between bcc and fcc Iron

Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays

Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on ( n 1 1 ) A GaAs substrates

Design of electron correlation effects in interfaces and nanostructures

Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe(0001) films on Si(111), Si(110) and Si(100)

A model for the performance analysis and design of waveguide p-i-n photodetectors

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(1 0 0) substrates

Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

ZnO and related materials: plasma-assisted molecular beam epitaxial growth, characterization, and application

Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Magnetoluminescence measurements of two-dimensional hole gas

Evaluation of SiC as a substrate material for nitride materials heteroepitaxy

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE

Extremely flat interfaces in GaAs/AlGaAs quantum wells grown on GaAs (411)A substrates by molecular beam epitaxy

Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

High-pressure study of deep emission band at GaAs/partially ordered GaInP interface

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