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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

Volltextzugriff (PDF)

SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

Volltextzugriff (PDF)

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

Volltextzugriff (PDF)

p-channel SiGe heterostructures for field effect applications

Applied surface science, 1996-08, Vol.102, p.221-229

Whall, T.E.

1996

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

Volltextzugriff (PDF)

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Journal of crystal growth, 1995-12, Vol.157 (1), p.353-361

Whall, T.E.

1995

Volltextzugriff (PDF)

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

Volltextzugriff (PDF)

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Journal of crystal growth, 1995-12, Vol.157 (1), p.109-112

1995

Volltextzugriff (PDF)

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

Thin solid films, 1992-12, Vol.222 (1-2), p.141-144

1992

Volltextzugriff (PDF)

Optical properties of Si/Si1-xGex heterostructure based wires

Solid state communications, 1993, Vol.85 (3), p.199-202

1993

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Raman spectroscopy of dry etched Si-Si1-xGex quantum dots

Solid state communications, 1995-05, Vol.94 (5), p.369-372

1995

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Transconductance and mobility of Si:B delta MOSFETs

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.157-162

1993

Volltextzugriff (PDF)

P-type delta doping in silicon MBE

Thin solid films, 1990, Vol.184 (1), p.15-19

1990

Volltextzugriff (PDF)

Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

Thin solid films, 1992-12, Vol.222 (1-2), p.24-26

1992

Volltextzugriff (PDF)

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Thin solid films, 1992-12, Vol.222 (1), p.116-119

1992

Volltextzugriff (PDF)

Silicon boron delta doped fet : growth and fabrication

Electronics letters, 1992, Vol.28 (7), p.667-669

1992

Volltextzugriff (PDF)

The p-n diode as a diagnostic tool for silicon molecular beam epitaxy

Thin solid films, 1990, Vol.184 (1), p.177-183

1990

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Evidence of reduced self-heating in strained Si MOSFETs

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

SiGe(C) epitaxial technologies—issues and prospectives

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

SiGe : heterostructures for CMOS technology

Impact ionisation in strained SiGe pMOSFETs

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

p-channel SiGe heterostructures for field effect applications

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

Optical properties of Si/Si1-xGex heterostructure based wires

Raman spectroscopy of dry etched Si-Si1-xGex quantum dots

Transconductance and mobility of Si:B delta MOSFETs

P-type delta doping in silicon MBE

Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Silicon boron delta doped fet : growth and fabrication

The p-n diode as a diagnostic tool for silicon molecular beam epitaxy

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