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Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

Journal of materials science. Materials in electronics, 2013-11, Vol.24 (11), p.4328-4331

2013

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Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

Journal of materials science. Materials in electronics, 2013-05, Vol.24 (5), p.1696-1701

2013

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Impact of the germanium concentration in the stability of E-centers and A-centers in Si1−xGex

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2772-2776

2013

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Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2237-S2246

2005

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Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.721-728

2007

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An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter

Applied physics. A, Materials science & processing, 2005-07, Vol.81 (2), p.385-388

2005

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Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Radiation measurements, 2007-04, Vol.42 (4), p.688-692

2007

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Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.115-118

2004

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Defects in Ge-doped Cz-Si annealed under high stress

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.82-87

2006

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Study of a liquid metal field ion emitter for the production of Si ions

Microelectronic engineering, 2004-06, Vol.73-74, p.116-119

2004

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Carbon-related radiation damage centres and processes in p-type Si

Semiconductor science and technology, 1990-07, Vol.5 (7), p.645-648

Londos, C A

1990

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Structural, magnetic, and EPR studies of BaCuO2+x

Journal of solid state chemistry, 1995-10, Vol.119 (1), p.50-61

1995

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Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500°C

Applied physics letters, 1993-03, Vol.62 (13), p.1525-1526

1993

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Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

Journal of applied physics, 1988, Vol.63 (1), p.183-189

1988

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Aspects of the defect reactions related to carbon impurity in silicon

Japanese Journal of Applied Physics, 1988-11, Vol.27 (11), p.2089-2093

LONDOS, C. A

1988

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DLTS investigation of deep levels in bulk GaAs under uniaxial stress

Semiconductor science and technology, 1990-11, Vol.5 (11), p.1100-1104

1990

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Experimental studies of the EuBa2-xEuxCu3O7- delta compound in the tetragonal phase

Journal of physics. Condensed matter, 1993-01, Vol.5 (2), p.229-234

1993

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Defect states in electron-bombarded n-type silicon

Physica status solidi. A, Applied research, 1989-06, Vol.113 (2), p.503-510

Londos, C. A.

1989

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Investigation of a New Metastable Defect in Boron-Doped Cz-Si

Physica status solidi. A, Applied research, 1992-10, Vol.133 (2), p.429-437

Londos, C. A.

1992

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The Production and the Evolution of A-Centers and Divacancies in Silicon

Physica status solidi. A, Applied research, 1992-07, Vol.132 (1), p.43-50

Londos, C. A.

1992

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Isochronal Annealing Studies of the Oxygen-Vacancy Centres in Neutron-Irradiated Si

Physica status solidi. A, Applied research, 1997-10, Vol.163 (2), p.325-335

1997

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An anomalous feature on the DLTS spectrum of silicon

Solid state communications, 1987-06, Vol.62 (10), p.719-722

Londos, C.A.

1987

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Annealing Studies of Defects Pertinent to Radiation Damage in Si:B

Physica status solidi. A, Applied research, 1987-08, Vol.102 (2), p.639-644

Londos, C. A.

1987

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Room-temperature irradiation of p-type Silicon

Physica status solidi. A, Applied research, 1985-12, Vol.92 (2), p.609-614

Londos, C. A.

1985

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Temperature dependence of the EPR spectra of EuBa2Cu3O7-δ in orthorhombic and tetragonal phases

The Journal of physics and chemistry of solids, 1992, Vol.53 (1), p.211-213

1992

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Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

Impact of the germanium concentration in the stability of E-centers and A-centers in Si1−xGex

Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies

Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter

Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing

Defects in Ge-doped Cz-Si annealed under high stress

Study of a liquid metal field ion emitter for the production of Si ions

Carbon-related radiation damage centres and processes in p-type Si

Structural, magnetic, and EPR studies of BaCuO2+x

Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500°C

Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

Aspects of the defect reactions related to carbon impurity in silicon

DLTS investigation of deep levels in bulk GaAs under uniaxial stress

Experimental studies of the EuBa2-xEuxCu3O7- delta compound in the tetragonal phase

Defect states in electron-bombarded n-type silicon

Investigation of a New Metastable Defect in Boron-Doped Cz-Si

The Production and the Evolution of A-Centers and Divacancies in Silicon

Isochronal Annealing Studies of the Oxygen-Vacancy Centres in Neutron-Irradiated Si

An anomalous feature on the DLTS spectrum of silicon

Annealing Studies of Defects Pertinent to Radiation Damage in Si:B

Room-temperature irradiation of p-type Silicon

Temperature dependence of the EPR spectra of EuBa2Cu3O7-δ in orthorhombic and tetragonal phases

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