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Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

IEEE electron device letters, 2005-10, Vol.26 (10), p.728-730

2005

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Electron transport and electroluminescent efficiency of conjugated polymers

Synthetic metals, 2009, Vol.159 (1), p.137-141

2009

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A New On-Chip Substrate-Coupled Inductor Model Implemented With Scalable Expressions

IEEE journal of solid-state circuits, 2006-11, Vol.41 (11), p.2491-2499

2006

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A novel program-erasable high-κ AlN-Si MIS capacitor

IEEE electron device letters, 2005-03, Vol.26 (3), p.148-150

2005

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RF noise in 0.18-μm and 0.13-μm MOSFETs

IEEE microwave and wireless components letters, 2002-12, Vol.12 (12), p.464-466

2002

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Structure and magnetic properties of [001] NiFe/NiMn/Co

IEEE transactions on magnetics, 2000-09, Vol.36 (5), p.2641-2643

2000

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A Study of Self-Aligned Nitride Erasable OTP Cell by 45-nm CMOS Fully Compatible Process

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1228-1234

2009

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A novel program-erasable capacitor using high-κ AlN dielectric

2004

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A tunable and program-erasable capacitor on Si with excellent tuning memory

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, p.259-262

2004

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Design of reconfigurable antennas based on an L-shaped slot and PIN diodes for compact wireless devices

IET microwaves, antennas & propagation, 2009-02, Vol.3 (1), p.47-54

2009

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Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- k/Metal Gate pMOSFET

IEEE electron device letters, 2010-11, Vol.31 (11), p.1290-1292

2010

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High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

IEEE electron device letters, 2008-02, Vol.29 (2), p.158-160

2008

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Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

IEEE journal of quantum electronics, 2002-05, Vol.38 (5), p.446-450

2002

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Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065007-065007

2010

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Improved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2818-2824

2012

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Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

Semiconductor science and technology, 2008-05, Vol.23 (5), p.055002

2008

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The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment

Thin solid films, 2010-11, Vol.519 (2), p.919-922

2010

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Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications

Microelectronics and reliability, 2014-11, Vol.54 (11), p.2388-2391

2014

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Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films

IEEE electron device letters, 2006-06, Vol.27 (6), p.451-453

2006

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Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

Journal of electronic materials, 2012-07, Vol.41 (7), p.1936-1940

2012

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Effects of fluorine incorporation on the properties of Ge p -MOS capacitors with HfTiON dielectric

Solid-state electronics, 2010-07, Vol.54 (7), p.675-679

2010

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Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine

Thin solid films, 2012-04, Vol.520 (13), p.4482-4485

2012

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A World-Band Triple-Mode 802.11a/b/g SOC in 130-nm CMOS

IEEE journal of solid-state circuits, 2009-11, Vol.44 (11), p.2911-2921

2009

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Nitride-based light-emitting diodes with p-AlInGaN surface layers

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2346-2349

2005

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Rapid thermal annealed InGaN/GaN flip-chip LEDs

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.32-37

2006

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Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

Electron transport and electroluminescent efficiency of conjugated polymers

A New On-Chip Substrate-Coupled Inductor Model Implemented With Scalable Expressions

A novel program-erasable high-κ AlN-Si MIS capacitor

RF noise in 0.18-μm and 0.13-μm MOSFETs

Structure and magnetic properties of [001] NiFe/NiMn/Co

A Study of Self-Aligned Nitride Erasable OTP Cell by 45-nm CMOS Fully Compatible Process

A novel program-erasable capacitor using high-κ AlN dielectric

A tunable and program-erasable capacitor on Si with excellent tuning memory

Design of reconfigurable antennas based on an L-shaped slot and PIN diodes for compact wireless devices

Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- k/Metal Gate pMOSFET

High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface

Improved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor

Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment

Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications

Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films

Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

Effects of fluorine incorporation on the properties of Ge p -MOS capacitors with HfTiON dielectric

Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine

A World-Band Triple-Mode 802.11a/b/g SOC in 130-nm CMOS

Nitride-based light-emitting diodes with p-AlInGaN surface layers

Rapid thermal annealed InGaN/GaN flip-chip LEDs

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