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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509

2020

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IEEE_Xplore

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1727-1730

2021

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IEEE_Xplore

Improving Handover and Drop-off Performance on High-Speed Trains With Multi-RAT

IEEE transactions on intelligent transportation systems, 2014-12, Vol.15 (6), p.2720-2725

2014

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IEEE_Xplore

Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3837-3843

2016

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IEEE_Xplore

32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1808-1813

2016

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IEEE_Xplore

In-Situ monitoring intermediate stages in ammonia oxidation reaction via high performance NiCuBOx-1/NF electrocatalysts

Chemical engineering journal (Lausanne, Switzerland : 1996), 2023-10, Vol.474, p.145907, Article 145907

2023

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Consistent discretization of higher-order interface models for thin layers and elastic material surfaces, enabled by isogeometric cut-cell methods

Computer methods in applied mechanics and engineering, 2019-06, Vol.350, p.245-267

2019

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MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High‑κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

ACS applied electronic materials, 2021-05, Vol.3 (5), p.2164-2169

2021

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Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.6.3.1-6.3.4

2019

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IEEE_Xplore

Establishing an invar leveling calibration system

Journal of the Chinese Institute of Engineers, 2008-07, Vol.31 (5), p.861-866

2008

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A Multi-link Mechanism for Heterogeneous Radio Networks

Wireless personal communications, 2014-06, Vol.76 (4), p.661-674

2014

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Comparison of 6 Common Noise Filter Methods for Terrestrial Laser Scanner Target

Applied Mechanics and Materials, 2012-05, Vol.170-173, p.2929-2934

2012

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Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.3.3.1-3.3.4

2019

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IEEE_Xplore

Graphene-Coated Substrate-Mediated Photoresponse from MoS2/UCNP Nanohybrid-Based Photodetectors

ACS applied electronic materials, 2022-11, Vol.4 (11), p.5475-5486

2022

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

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IEEE_Xplore

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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IEEE_Xplore

Epitaxial Growth of GaN/AlN on h‑BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

ACS applied electronic materials, 2023-01, Vol.5 (1), p.146-154

2023

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Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Journal of electronic materials, 2018-02, Vol.47 (2), p.1071-1079

2018

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Analytical Modeling of Tunnel-Junction Transistor Lasers

IEEE journal of selected topics in quantum electronics, 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-8

2022

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IEEE_Xplore

Timing-dependent effects of transcranial direct current stimulation with mirror therapy on daily function and motor control in chronic stroke: a randomized controlled pilot study

Journal of neuroengineering and rehabilitation, 2020-07, Vol.17 (1), p.101-101, Article 101

2020

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A New Study on Combustion Behavior of Pine Sawdust Characterized by the Weibull Distribution

Chinese journal of chemical engineering, 2009-10, Vol.17 (5), p.860-868

Lo Kuo-Chao Wu Keng-Tung Chyang Chien-Song Ting Wei-The

2009

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Use of fluorescence quenching method to measure sorption constants of phenolic xenoestrogens onto humic fractions from sediment

Journal of hazardous materials, 2014-07, Vol.277, p.27-33

2014

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Abnormal Degradation Behaviors Under Negative Bias Stress in Flexible p-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors After Laser Lift-Off Process

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1079-1084

2023

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IEEE_Xplore

Using Artificial Intelligence to Predict Class Loyalty and Plagiarism in Students in an Online Blended Programming Course during the COVID-19 Pandemic

Electronics (Basel), 2021-09, Vol.10 (18), p.2203

2021

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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Improving Handover and Drop-off Performance on High-Speed Trains With Multi-RAT

Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

In-Situ monitoring intermediate stages in ammonia oxidation reaction via high performance NiCuBOx-1/NF electrocatalysts

Consistent discretization of higher-order interface models for thin layers and elastic material surfaces, enabled by isogeometric cut-cell methods

MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High‑κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

Establishing an invar leveling calibration system

A Multi-link Mechanism for Heterogeneous Radio Networks

Comparison of 6 Common Noise Filter Methods for Terrestrial Laser Scanner Target

Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs

Graphene-Coated Substrate-Mediated Photoresponse from MoS2/UCNP Nanohybrid-Based Photodetectors

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Epitaxial Growth of GaN/AlN on h‑BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Analytical Modeling of Tunnel-Junction Transistor Lasers

Timing-dependent effects of transcranial direct current stimulation with mirror therapy on daily function and motor control in chronic stroke: a randomized controlled pilot study

A New Study on Combustion Behavior of Pine Sawdust Characterized by the Weibull Distribution

Use of fluorescence quenching method to measure sorption constants of phenolic xenoestrogens onto humic fractions from sediment

Abnormal Degradation Behaviors Under Negative Bias Stress in Flexible p-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors After Laser Lift-Off Process

Using Artificial Intelligence to Predict Class Loyalty and Plagiarism in Students in an Online Blended Programming Course during the COVID-19 Pandemic

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