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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1878-1884

2012

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Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

Microelectronic engineering, 2011-04, Vol.88 (4), p.362-365

2011

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3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

IEEE transactions on nanotechnology, 2007-01, Vol.6 (1), p.48-55

2007

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Impact of scattering in ‘atomistic’ device simulations

Solid-state electronics, 2005-05, Vol.49 (5), p.733-739

2005

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SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs

Journal of physics. Conference series, 2006, Vol.38 (1), p.184

2006

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Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S155-S157

2004

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Atomistic scattering close to an interface

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.204-207

2006

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Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-κ dielectric MOSFETS

Journal of computational electronics, 2006-12, Vol.5 (4), p.463-466

2006

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Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

IEEE transactions on nanotechnology, 2002-12, Vol.1 (4), p.195-200

2002

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Monte carlo study of mobility in Si devices with HfO2-based oxides

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.995-999

2006

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On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering

Journal of computational electronics, 2007-09, Vol.6 (1-3), p.1-5

2007

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Indication of velocity overshoot in strained Si0.8Ge0.2 p-channel MOSFETs

Semiconductor science and technology, 2000-06, Vol.15 (6), p.573-578

2000

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A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures

Microelectronic engineering, 1999-06, Vol.47 (1), p.369-371

1999

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

Journal of computational electronics, 2004-10, Vol.3 (3-4), p.171-175

2004

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Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study

Journal of computational electronics, 2004-10, Vol.3 (3-4), p.341-345

2004

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Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Semiconductor science and technology, 1999-01, Vol.14 (1), p.12-22

1999

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Quantum corrections in the simulation of decanano MOSFETs

Solid-state electronics, 2003-07, Vol.47 (7), p.1141-1145

2003

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Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Semiconductor science and technology, 1998-01, Vol.13 (1), p.43-53

1998

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Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.339-344

2005

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The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Solid-state electronics, 2004-08, Vol.48 (8), p.1337-1346

2004

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On the mobility extraction for HMOSFETs

Solid-state electronics, 2001-03, Vol.45 (3), p.527-529, Article 527

2001

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Magnetic-field induced type I to type II transition in Zn1-xMnxTe/ZnTe multiple quantum well samples

Semiconductor science and technology, 1997-10, Vol.12 (10), p.1240-1251

1997

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Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

2010 14th International Workshop on Computational Electronics, 2010, p.1-4

2010

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Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Microelectronics and reliability, 2004-07, Vol.44 (7), p.1101-1107

2004

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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Improved effective mobility extraction in MOSFETs

Impact of scattering in ‘atomistic’ device simulations

SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs

Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

Atomistic scattering close to an interface

Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-κ dielectric MOSFETS

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

Monte carlo study of mobility in Si devices with HfO2-based oxides

On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering

Indication of velocity overshoot in strained Si0.8Ge0.2 p-channel MOSFETs

A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures

Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study

Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Quantum corrections in the simulation of decanano MOSFETs

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

On the mobility extraction for HMOSFETs

Magnetic-field induced type I to type II transition in Zn1-xMnxTe/ZnTe multiple quantum well samples

Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

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