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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.623-625

2013

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Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Journal of materials science. Materials in electronics, 2020-07, Vol.31 (13), p.10078-10083

2020

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Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Microsystems & nanoengineering, 2023-03, Vol.9 (1), p.40-40, Article 40

2023

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Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Journal of materials science. Materials in electronics, 2020-06, Vol.31 (12), p.9796-9802

2020

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Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.23-27

2024

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A 200-MS/s 10-Bit SAR ADC Applied in WLAN Systems

Applied sciences, 2023-06, Vol.13 (12), p.7040

2023

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A 2.4 GHz quadrature LC-VCO with combination of tunable pulse coupling and parallel coupling to optimize phase noise

Analog integrated circuits and signal processing, 2020, Vol.102 (1), p.205-212

2020

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Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

Journal of materials science. Materials in electronics, 2021-10, Vol.32 (19), p.24107-24114

2021

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Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

IEEE electron device letters, 2015-07, Vol.36 (7), p.648-650

2015

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Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4490-4498

2018

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Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

IEEE electron device letters, 2016-04, Vol.37 (4), p.363-365

2016

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Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.26-33

2020

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Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.105-114

2020

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Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4546-4549

2016

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Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2611-2616

2017

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Blended Glial Cell's Spiking Neural Network

IEEE access, 2023, Vol.11, p.43566-43582

2023

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Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4199-4205

2015

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Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy

IEEE electron device letters, 2013-07, Vol.34 (7), p.870-872

2013

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Modified Transmission Line Model for Bottom-Contact Organic Transistors

IEEE electron device letters, 2013-10, Vol.34 (10), p.1301-1303

2013

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A Novel Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

IEEE transactions on nanotechnology, 2014-11, Vol.13 (6), p.1133-1137

2014

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Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.483-488

2019

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Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1394-1401

2007

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Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1411-1418

2015

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Effects of carbon pre-silicidation implant into Si substrate on NiSi

Microelectronic engineering, 2014-05, Vol.120, p.178-181

2014

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Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

IEEE electron device letters, 2014-03, Vol.35 (3), p.303-305

2014

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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

A 200-MS/s 10-Bit SAR ADC Applied in WLAN Systems

A 2.4 GHz quadrature LC-VCO with combination of tunable pulse coupling and parallel coupling to optimize phase noise

Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Blended Glial Cell's Spiking Neural Network

Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy

Modified Transmission Line Model for Bottom-Contact Organic Transistors

A Novel Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Effects of carbon pre-silicidation implant into Si substrate on NiSi

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

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